DatasheetsPDF.com

IS25WQ080 Dataheets PDF



Part Number IS25WQ080
Manufacturers ISSI
Logo ISSI
Description 8 Mbit bit Single Operating Voltage Serial Flash Memory
Datasheet IS25WQ080 DatasheetIS25WQ080 Datasheet (PDF)

8 Mbit bit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or Quad-Output SPI Bus Interface IS25WQ080 FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 2 V • Memory Organization - IS25WQ080: 1024K x 8 (8 Mbit) • Cost Effective Sector/Block Architecture - 8Mb : Uniform 4KByte sectors / Sixteen uniform 64KByte blocks • Serial Peripheral Interface (SPI) Compatible - Supports single-, dual- or quad-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate .

  IS25WQ080   IS25WQ080



Document
8 Mbit bit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or Quad-Output SPI Bus Interface IS25WQ080 FEATURES • Single Power Supply Operation - Low voltage range: 1.65 V – 2 V • Memory Organization - IS25WQ080: 1024K x 8 (8 Mbit) • Cost Effective Sector/Block Architecture - 8Mb : Uniform 4KByte sectors / Sixteen uniform 64KByte blocks • Serial Peripheral Interface (SPI) Compatible - Supports single-, dual- or quad-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate for normal read - Maximum 104 MHz clock rate for fast read - Maximum 208MHz clock rate equivalent Dual SPI - Maximum 416MHz clock rate equivalent Quad SPI • Byte Program Operation - Typical 8 us/Byte • Page Program (up to 256 Bytes) Operation - Maximum 0.7 ms per page program • Sector, Block or Chip Erase Operation - Sector Erase (4KB)150 ms (Max) - Block Erase (32K/64KB)0.5S (Max) - Chip Erase 6s (8Mb) (Max) •Deep power-down mode 1uA (Typ) PRELIMINARY DATASHEET • Low Power Consumption - Max 15 mA active read current - Max 20 mA program/erase current - Max 50uA standby current • Hardware Write Protection - Protect and unprotect the device from write operation by Write Protect (WP#) Pin • Software Write Protection - The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only • High Product Endurance - Guaranteed 100,000 program/erase cycles per single sector - Minimum 20 years data retention • Industrial Standard Pin-out and Package - 8-pin PDIP - 8-pin 208mil SOIC - 8-pin 150mil SOIC - 8-pin 150mil VVSOP - 8-contact WSON - 16-pin 300mil SOP - Lead-free (Pb-free) package Additional 256-byte Security information one-time programmable (OTP) area GENERAL DESCRIPTION The IS25WQ080 are 8Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quadoutput. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, ranging from 1.65 Volt to 2.0 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers. The IS25WQ080 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (Sl), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks. The IS25WQ080 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are offered in 8-pin SOIC 150mil/208mil, 8-contact WSON, 8-pin PDIP and 8-pin VVSOP 150mil, . Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/18/2012 1 CONNECTION DIAGRAMS CE# 1 8 SO (IO1) 2 7 WP# (IO2) 3 6 Vcc CE# 1 HOLD# (IO3) SO (IO1) 2 WP# (IO2) 3 SCK GND 4 GND 4 5 SI (IO0) IS25WQ080 8 Vcc 7 HOLD# (IO3) 6 SCK 5 SI (I.


ET3148 IS25WQ080 NFC1AT80A01N7


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)