2SC3074. C3074 Datasheet

C3074 2SC3074. Datasheet pdf. Equivalent

C3074 Datasheet
Recommendation C3074 Datasheet
Part C3074
Description 2SC3074
Feature C3074; TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching.
Manufacture Toshiba Semiconductor
Datasheet
Download C3074 Datasheet




Toshiba Semiconductor C3074
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
High speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27



Toshiba Semiconductor C3074
Electrical Characteristics (Ta = 25°C)
2SC3074
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 1 V, IC = 3 A
IC = 3 A, IB = 0.15 A
IC = 3 A, IB = 0.15 A
VCE = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
50 ― ―
V
70 240
30 ― ―
0.2 0.4
V
0.9 1.2
V
120 MHz
80 pF
Turn-on time
Switching time Storage time
ton 20 μs
IB1 OUTPUT 0.1
INPUT
tstg IB2 IB2
1.0
μs
VCC = 30 V
Fall time
tf IB1 = 0.15 A , IB2 = 0.15 A
Duty cycle 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
0.1
C3074
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-08-27



Toshiba Semiconductor C3074
IC – VCE
10
Common emitter
8
100 90
80
Tc = 25°C
70
60
6 50
40
4 30
20
2 IB = 10 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE – IC
1.0
0.8
IB = 10 mA
0.6
20
Common emitter
Tc = 100°C
40 60 80 100
120
150
0.4
200
500
0.2
0
01 23456 7
Collector current IC (A)
2SC3074
1.2
1.0
0.8 IB = 10 mA
20
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = 25°C
40 60 80
100
150
200
300
500
0
01234567
Collector current IC (A)
1.2
1.0
0.8 IB = 20 mA
40
0.6
0.4
0.2
VCE – IC
Common emitter
Tc = 55°C
120 160 200
250
300
500
0
01 23456 7
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 1 V
Tc = 100°C
25
55
10
0.03
0.1 0.3 1 3
Collector current IC (A)
10
1
Common emitter
0.5 IC/IB = 20
0.3
VCE (sat) – IC
Tc = 55°C
0.1
25
0.05
0.03
100
0.01
0.03
0.1 0.3 1 3
Collector current IC (A)
10
3 2010-08-27







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