TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit:...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27
Electrical Characteristics (Ta = 25°C)
2SC3074
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collec...
