Document
Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3 2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
1.2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (–)180 (–)160 (–)5 (–)140 (–)200 1 10 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
min 100*
Ratings typ
max
Unit
(–)0.1 µA
(–)0.1 µA
400*
150 MHz
(4.0)3.0
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5
2SA1209/2SC2911
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time
Switching Test Circuit
IB1 IN 3kΩ IB2
RB 5kΩ 50Ω
+ 1µF
Symbol
Conditions
VCE(sat)
ton tf tstg
IC=(–)50mA, IB=(–)5mA See specified Test Circuit See specified Test Circuit See specified Test Circuit
OUT
2kΩ + 1µF
--2V 20V
IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.)
Ratings min typ max
Unit
0.07 0.3 (–0.14) (–0.4)
V
0.1 µs
0.1 µs
1.5 µs
Collector Current, IC – mA
IC -- VCE
--140
2SA1209
--120 --0.6mA --0.5mA
--100
--80
--0.4m.