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C2911 Dataheets PDF



Part Number C2911
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC2911
Datasheet C2911 DatasheetC2911 Datasheet (PDF)

Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base .

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Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 12 3 2.4 4.8 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA Output Capacitance Cob VCB=(–)10V, f=1MHz *: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)180 (–)160 (–)5 (–)140 (–)200 1 10 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C min 100* Ratings typ max Unit (–)0.1 µA (–)0.1 µA 400* 150 MHz (4.0)3.0 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5 2SA1209/2SC2911 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Switching Test Circuit IB1 IN 3kΩ IB2 RB 5kΩ 50Ω + 1µF Symbol Conditions VCE(sat) ton tf tstg IC=(–)50mA, IB=(–)5mA See specified Test Circuit See specified Test Circuit See specified Test Circuit OUT 2kΩ + 1µF --2V 20V IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) Ratings min typ max Unit 0.07 0.3 (–0.14) (–0.4) V 0.1 µs 0.1 µs 1.5 µs Collector Current, IC – mA IC -- VCE --140 2SA1209 --120 --0.6mA --0.5mA --100 --80 --0.4m.


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