Power Rectifier. MBRAF440T3G Datasheet

MBRAF440T3G Rectifier. Datasheet pdf. Equivalent

MBRAF440T3G Datasheet
Recommendation MBRAF440T3G Datasheet
Part MBRAF440T3G
Description Surface Mount Schottky Power Rectifier
Feature MBRAF440T3G; MBRAF440T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principl.
Manufacture ON Semiconductor
Datasheet
Download MBRAF440T3G Datasheet




ON Semiconductor MBRAF440T3G
MBRAF440T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
GuardRing for Stress Protection
These are PbFree and HalideFree Devices
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
4.0 AMPERE
40 VOLTS
SMAFL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAFG
G
RAF = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF440T3G SMAFL 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 Rev. 1
1
Publication Order Number:
MBRAF440T3/D



ON Semiconductor MBRAF440T3G
MBRAF440T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 107°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
40
4.0
100
V
A
A
Storage/Operating Case Temperature
Tstg, TC
55 to +150
°C
Operating Junction Temperature (Note 1)
TJ 55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance JunctiontoLead (Note 2)
Thermal Resistance JunctiontoAmbient (Note 2)
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
RRθθJJAL
Value
25
90
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 4.0 A)
VF
TJ = 25°C
TJ = 100°C
V
0.485
0.435
Maximum Instantaneous Reverse Current
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 40 V)
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.
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2



ON Semiconductor MBRAF440T3G
MBRAF440T3G
TYPICAL CHARACTERISTICS
10 10
1 TJ = 125°C
0.1
0.10
TJ = 100°C TJ = 25°C TJ = 55°C
0.20 0.30 0.40
0.50
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1
TJ = 125°C
TJ = 100°C
0.1
0.10
TJ = 25°C
TJ = 55°C
0.20 0.30 0.40 0.50
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.60
100E3
10E3
1E3
100E6
10E6
1E6
100E9
10E9
1E9
100E12
0
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = 55°C
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E3
10E3
1E3
100E6
10E6
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = 55°C
40 1E60
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
SQUARE
WAVE
dc
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
0.5 1 1.5 2 2.5 3 3.5 4 4.5
IO, AVERAGE FORWARD CURRENT (AMPS)
5
Figure 5. Forward Power Dissipation
1000
TJ = 25 °C
100 0
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
40
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