Power Rectifier. MBRAF260T3G Datasheet

MBRAF260T3G Rectifier. Datasheet pdf. Equivalent

MBRAF260T3G Datasheet
Recommendation MBRAF260T3G Datasheet
Part MBRAF260T3G
Description Surface Mount Schottky Power Rectifier
Feature MBRAF260T3G; MBRAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principl.
Manufacture ON Semiconductor
Datasheet
Download MBRAF260T3G Datasheet




ON Semiconductor MBRAF260T3G
MBRAF260T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
GuardRing for Stress Protection
These are PbFree and HalideFree Devices
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
60 VOLTS
SMAFL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAGG
G
RAG = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF260T3G SMAFL 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 0
1
Publication Order Number:
MBRAF260/D



ON Semiconductor MBRAF260T3G
MBRAF260T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 120°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 90°C
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Value
60
2.0
4.0
60
Unit
V
A
A
A
Storage Temperature Range
Tstg 55 to +150
°C
Operating Junction Temperature
TJ 55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
RRqqJJAL
Value
25
90
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(VR = 60 V)
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
Symbol
vF
IR
Value
TJ = 25°C
TJ = 125°C
0.51 0.475
0.63 0.55
TJ = 25°C
TJ = 125°C
0.2 20
Unit
V
mA
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2



ON Semiconductor MBRAF260T3G
MBRAF260T3G
10 10
125°C
75°C
25°C
11
125°C
75°C
25°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1.0E02
1.0E03
1.0E04
1.0E05
1.0E06
1.0E07
0
125°C
75°C
25°C
10 20 30 40 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100
10
60 0
25°C
f = 1 MHz
10 20 30 40 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
60
100
50% Duty Cycle
20%
10 10%
5%
2%
1
1%
0.1
0.01 Single Pulse
0.001
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1 10
t, PULSE TIME (S)
Figure 5. Typical Transient Thermal Response, JunctiontoAmbient
100 1000
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3







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