MBRAF2H100G

MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection These are Pb−Free and Halide−Free Devices Mechanical Charactersistics Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 100 VOLTS SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM AYWW RAAG G RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF2H100G SMA−FL 5000 / Tape & Reel (Pb−Free...