Power Rectifier. MBRAF3200T3G Datasheet

MBRAF3200T3G Rectifier. Datasheet pdf. Equivalent

MBRAF3200T3G Datasheet
Recommendation MBRAF3200T3G Datasheet
Part MBRAF3200T3G
Description Surface Mount Schottky Power Rectifier
Feature MBRAF3200T3G; MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier princi.
Manufacture ON Semiconductor
Datasheet
Download MBRAF3200T3G Datasheet




ON Semiconductor MBRAF3200T3G
MBRAF3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage 200 V
150°C Operating Junction Temperature
GuardRing for Stress Protection
This is a PbFree Device
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 100°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
200
3.0
100
V
A
A
Operating Junction Temperature
TJ 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
SMAFL
CASE 403AA
PLASTIC
STYLE 6
MARKING DIAGRAM
AYWW
RACG
G
RAC = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF3200T3G SMAFL 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 0
1
Publication Order Number:
MBRAF3200T3/D



ON Semiconductor MBRAF3200T3G
MBRAF3200T3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 1
Thermal Resistance, JunctiontoAmbient (Note 1)
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
100
TC = 100°C
100
10
TC = 150°C
TC = 25°C
10
Symbol
RRqqJJAL
Value
25
90
Symbol
VF
IR
Value
0.84
0.86
0.62
1.0
6.0
TC = 100°C
TC = 150°C
Unit
°C/W
Unit
V
mA
mA
TC = 25°C
11
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VF, INSTANTANEOUS VOLTAGE (V)
1.2
Figure 2. Maximum Forward Voltage
1.0E03
1.0E04
TC = 150°C
1.0E01
1.0E02
1.0E05 TC = 100°C
1.0E06
1.0E07
1.0E03
1.0E04
1.0E08 TC = 25°C
1.0E05
1.0E09
0
1.0E06
20 40 60 80 100 120 140 160 180 200
0
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
TC = 150°C
TC = 25°C
20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
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2



ON Semiconductor MBRAF3200T3G
MBRAF3200T3G
1000
Typical Capacitance
at 0 V = 209 V
100
TC = 25°C
f = 1 MHz
10
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
100
50% Duty Cycle
20%
10 10%
5%
2%
1
1%
0.1
0.01 Single Pulse
0.001
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1 10
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, JunctiontoAmbient
100 1000
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3







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