Power Rectifier. MBRAF360T3G Datasheet

MBRAF360T3G Rectifier. Datasheet pdf. Equivalent

MBRAF360T3G Datasheet
Recommendation MBRAF360T3G Datasheet
Part MBRAF360T3G
Description Surface Mount Schottky Power Rectifier
Feature MBRAF360T3G; MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principl.
Manufacture ON Semiconductor
Datasheet
Download MBRAF360T3G Datasheet




ON Semiconductor MBRAF360T3G
MBRAF360T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
GuardRing for Stress Protection
These are PbFree and HalideFree Devices
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
60 VOLTS
SMAFL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAHG
G
RAH = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF360T3G SMAFL 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 0
1
Publication Order Number:
MBRAF360/D



ON Semiconductor MBRAF360T3G
MBRAF360T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 125°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
60
3.0 @ TL = 100°C
4.0 @ TL = 80°C
6
125
V
A
A
A
Storage Temperature Range
Tstg 65 to +150 °C
Operating Junction Temperature (Note 1)
TJ 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 2)
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
RqJL
RqJA
Value
25
90
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 3.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
VF
iR
Value
0.740
0.15
10
Unit
V
mA
10
TJ = 150°C
1 TJ = 175°C
TJ = 100°C
0.1
TJ = 25°C
TJ = 40°C
0.01
0.0 0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
10
TJ = 175°C
1
TJ = 150°C
0.1 TJ = 100°C
TJ = 25°C
TJ = 40°C
0.01
0.0 0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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2



ON Semiconductor MBRAF360T3G
MBRAF360T3G
1.0E+00
1.0E01
1.0E02
1.0E03
1.0E04
TJ = 175°C
TJ = 100°C
TJ = 150°C
1.0E05
1.0E06
TJ = 25°C
1.0E07
0
1.0E+00
10 20 30 40 50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
60
1.0E01
1.0E02
1.0E03
TJ = 175°C
TJ = 150°C
TJ = 100°C
1.0E04
1.0E05
TJ = 25°C
1.0E06
0
10 20 30 40 50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
60
1000
TJ = 25°C
100
10
0 10 20 30 40 50 60 70
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
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