ELM13401CA-S

Single P-channel MOSFET ELM13401CA-S ■General description ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. ■Features Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 65mΩ (Vgs=-4.5V) Rds(on) < 120mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C Ta=70°C Pulsed drain current Power dissipation Tc=25°C Tc=70°C Junction and storage temperature range Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V -4.2 -3.5 A1 -30 A 2 1.4 1.0 W1 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Symbol Rθja Rθjl Typ. 65 85 43 Max. 90 125 60 Unit °C/W °C/W °C/W Note 1 3 ■Pin configuration SOT-23(TOP VIEW) 3 12 Pin No. 1 2 3 Pin name GATE SOURCE DRAIN ■Circuit D G S 4- 1 Single P-channel MOSFET ELM13401CA-S ■Electrical characteristics Ta=25°C. Unless otherwise noted. Parameter Symbol Condition Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -30 V Zero gate voltage drain current Idss Vds=-24V Vgs=0V Ta=55°C -1 μA -5 Gate-body leakage current Igss Vds=0V, Vgs=±12V ±100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=-250μA -0.7 -1.0 -1.3 V On state drain current Id(on) Vgs=-4...