P-channel MOSFET. ELM13401CA-S Datasheet

ELM13401CA-S MOSFET. Datasheet pdf. Equivalent

ELM13401CA-S Datasheet
Recommendation ELM13401CA-S Datasheet
Part ELM13401CA-S
Description Single P-channel MOSFET
Feature ELM13401CA-S; Single P-channel MOSFET ELM13401CA-S ■General description ELM13401CA-S uses advanced trench techno.
Manufacture ELM Technology Corporation
Datasheet
Download ELM13401CA-S Datasheet




ELM Technology Corporation ELM13401CA-S
Single P-channel MOSFET
ELM13401CA-S
■General description
ELM13401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-30V
• Id=-4.2A (Vgs=-10V)
• Rds(on) < 50mΩ (Vgs=-10V)
• Rds(on) < 65mΩ (Vgs=-4.5V)
• Rds(on) < 120mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
-30 V
±12 V
-4.2
-3.5
A1
-30 A 2
1.4
1.0
W1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
65
85
43
Max.
90
125
60
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
12
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
4- 1



ELM Technology Corporation ELM13401CA-S
Single P-channel MOSFET
ELM13401CA-S
■Electrical characteristics
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-30
V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Ta=55°C
-1
μA
-5
Gate-body leakage current
Igss Vds=0V, Vgs=±12V
±100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-0.7 -1.0 -1.3 V
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-25
A
Static drain-source on-resistance
Vgs=-10V
Id=-4.2A
Ta=125°C
Rds(on)
Vgs=-4.5V, Id=-4A
42 50
75
53 65 mΩ
Vgs=-2.5V, Id=-1A
80 120 mΩ
Forward transconductance
Gfs Vds=-5V, Id=-5A
7 11
S
Diode forward voltage
Vsd Is=-1A, Vgs=0V
-0.75 -1.00 V
Max. body-diode continuous current Is
-2.2 A
DYNAMIC PARAMETERS
Input capacitance
Ciss
954 pF
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
115 pF
Reverse transfer capacitance
Crss
77 pF
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Vgs=-4.5V, Vds=-15V
Qgs
Id=-4A
Qgd
9.4 nC
2.0 nC
3.0 nC
Turn-on delay time
td(on)
6.3 ns
Turn-on rise time
tr Vgs=-10V, Vds=-15V
3.2 ns
Turn-off delay time
td(off) RL=3.6Ω, Rgen=6Ω
38.2 ns
Turn-off fall time
tf
12.0 ns
Body diode reverse recovery time
trr If=-4A, dIf/dt=100A/μs
20.2 ns
Body diode reverse recovery charge Qrr If=-4A, dIf/dt=100A/μs
11.2 nC
NOTE :
1.The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2.Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2



ELM Technology Corporation ELM13401CA-S
Single P-channel MOSFET
ELM13401CA-S
■Typical electrical and thermal characteristics
25.00
20.00
-10V
15.00
10.00
5.00
-4.5V
-3V
-2.5V
Vgs=-2V
10
Vds=-5V
8
6
4 125°C
2 25°C
0.00
0.00
120
1.00
2.00
3.00
4.00
-Vds (Volts)
Fig 1: On-Region Characteristics
5.00
100
80 Vgs=-2.5V
60 Vgs=-4.5V
40
Vgs=-10V
20
0.00
2.00
4.00
6.00
8.00
10.00
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
0 0.5 1 1.5 2 2.5 3
-Vgs (Volts)
Figure 2: Transfer Characteristics
1.8
1.6 Id=-3.5A, Vgs=-4.5V
Id=-3.5A, Vgs=-10V
1.4
1.2 Vgs=-2.5V
Id=-1A
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
190
170
150 Id=-2A
130
110
90 125°C
70
50 25°C
30
10
0 2 4 6 8 10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2 0.4 0.6 0.8 1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
1.2
4- 3







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