D-S MOSFET. SI9945BDY Datasheet

SI9945BDY MOSFET. Datasheet pdf. Equivalent

SI9945BDY Datasheet
Recommendation SI9945BDY Datasheet
Part SI9945BDY
Description Dual N-Channel 60-V (D-S) MOSFET
Feature SI9945BDY; New Product Dual N-Channel 60-V (D-S) MOSFET Si9945BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) .
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Vishay SI9945BDY
New Product
Dual N-Channel 60-V (D-S) MOSFET
Si9945BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.058 at VGS = 10 V
0.072 at VGS = 4.5 V
ID (A)a
5.3
4.7
Qg (Typ.)
13 nC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
APPLICATIONS
• LCD TV CCFL Inverter
• Load Switch
D1
D2
G1 G2
Top View
Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Width)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
S1
N-Channel MOSFET
Limit
60
± 20
5.3
4.3
4.3b, c
3.4b, c
20
2.6
1.7b, c
11
6.1
3.1
2
2b, c
1.3b, c
- 55 to 150
S2
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
55
33
Maximum
62.5
40
Unit
°C/W
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
1



Vishay SI9945BDY
Si9945BDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 5 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 4.3 A
VGS = 4.5 V, ID = 3.9 A
Forward Transconductancea
gfs VDS = 15 V, ID = 4.3 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 30 V, VGS = 10 V, ID = 4.3 A
Gate-Source Charge
Qgs VDS = 30 V, VGS = 4.5 V, ID = 4.3 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 8.8 Ω
ID 3.4 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 8.8 Ω
ID 3.4 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 1.7 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
60
1
20
Typ.
Max.
Unit
55
-6
2.5
0.046
0.059
15
3
100
1
10
0.058
0.072
V
mV/°C
V
nA
µA
A
Ω
S
665
75
40
13 20
69
2.3
2.6
2
15 25
65 100
15 25
10 15
10 15
15 25
20 30
10 15
pF
nC
Ω
ns
2.6
A
20
0.8 1.2
V
30 60 ns
32 50 nC
25
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64737
S09-0321-Rev. A, 02-Mar-09



Vishay SI9945BDY
New Product
Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
18 VGS = 10 thru 4 V
16
14
12
10
8
6
4
2 3V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
TC = 125 °C
1 25 °C
0 - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.080
0.075
0.070
0.065
0.060
VGS = 4.5 V
0.055
0.050
VGS = 10 V
0.045
0.040
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1000
800
Ciss
600
400
200
Coss
0 Crss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
10
VDS = 30 V
8 ID = 4.3 A
6
4
2
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
2.0
1.8 VGS = 10 V
ID = 4.3 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
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