SI9945BDY

New Product Dual N-Channel 60-V (D-S) MOSFET Si9945BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V ID (A)a 5.3 4.7 Qg (Typ.) 13 nC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET APPLICATIONS LCD TV CCFL Inverter Load Switch D1 D2 G1 G2 Top View Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (10 µs Width) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0 1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg S1 N-Channel MOSFET Limit 60 ± 20 5.3 4.3 4.3b, c 3.4b, c 20 2.6 1.7b, c 11 6.1 3.1 2 2b, c 1.3b, c - 55 to 150 S2 N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. Symbol RthJA RthJF Typical 55 33 Maximum 62.5 40 Unit °C/W Documen...