Enhancement-Mode MOSFET. SI9947DY Datasheet

SI9947DY MOSFET. Datasheet pdf. Equivalent

SI9947DY Datasheet
Recommendation SI9947DY Datasheet
Part SI9947DY
Description Dual P-Channel Enhancement-Mode MOSFET
Feature SI9947DY; Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.10.
Manufacture TEMIC
Datasheet
Download SI9947DY Datasheet




TEMIC SI9947DY
Si9947DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.10 @ VGS = –10 V
"3.5
–20
0.19 @ VGS = –4.5 V
"2.5
Recommended upgrade: Si4947DY or Si4953DY
Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
S1
S2
SO-8
S1 1
G1 2
S2 3
G2 4
Top View
8 D1
7 D1
6 D2
5 D2
G1 G2
D1 D1
PĆChannel MOSFET
D2 D2
PĆChannel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–20
"20
"3.5
"2.5
"10
–1.7
2.0
1.3
–55 to 150
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
62.5 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134.
A SPICE Model data sheet is available for this product (FaxBack document #70636).
Siliconix
S-47958—Rev. F, 15-Apr-96
1



TEMIC SI9947DY
Si9947DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –16 V, VGS = 0 V
VDS = –10 V, VGS = 0 V, TJ = 70_C
VDS v –5 V, VGS = –10 V
VDS v –5 V, VGS = –4.5 V
VGS = –10 V, ID = 3.5 A
VGS = –4.5 V, ID = 2 A
VDS = –15 V, ID = –3.5 A
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = –10 V, VGS = –10 V, ID = –3.5 A
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –3.5 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Min
–1.0
–14
–2.5
Typa Max Unit
"100
–1
–5
V
nA
mA
A
0.10
0.19
4.0
–0.9 –1.2
W
S
V
13 30
2 nC
5
21 40
12 25
12 30 ns
11 20
50 100
2 Siliconix
S-47958—Rev. F, 15-Apr-96



TEMIC SI9947DY
Si9947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
10
VGS = 10, 9, 8, 7, 6, 5 V
8 4V
Transfer Characteristics
10
8
66
4
2
0
0
0.32
3V
2V
2468
VDS – Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
4
2
0
0
2000
TC = 125_C
25_C
–55_C
1234
VGS – Gate-to-Source Voltage (V)
Capacitance
5
0.24 1500
0.16 VGS = 4.5 V
VGS = 10 V
0.08
0
02468
ID – Drain Current (A)
Gate Charge
10
VDS = 10 V
ID = 3.5 A
8
10
6
4
2
0
0 2 4 6 8 10 12
Qg – Total Gate Charge (nC)
Siliconix
S-47958—Rev. F, 15-Apr-96
14
1000
Ciss
500
Coss
0 Crss
04
8 12 16
VDS – Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.4
VGS = 10 V
ID = 3.5 A
1.2
1.0
0.8
0.6
–50
0 50 100
TJ – Junction Temperature (_C)
150
3







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