SI9947DY

Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 –20 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ S1 S2 SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 G1 G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –20 "20 "3.5 "2.5 "10 –1.7 2.0 1.3 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134. A SPICE Model data sheet is available for this product (FaxBack document #70636). Siliconix S-47958—Rev. F, 15-Apr-96 1 Si9947DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Trans...