RFT300-CC10G1

REM Data Sheet – RFTDAT-CC10 – Rev W Type RFT300-CC10G1 REM LOW-FADE SILICON MOSFET DOSIMETER Two RADFETs, Diode & Capacitor / Lid technology: "glob" September 2010 A- A' W= silicon chip 8.75 mm SpaceFET Copyright REM 2005 L= A 17 mm flying lead 6- way connector; A' pitch 1.25 mm 1 23 45 6 7 B/S D1 G1 D2 G2 T C cathode anode Copyright REM 2008 REM DOSIMETER SYSTEM: SpaceFET LAYOUT file RFTCAR23.PRE Jul 2008 ah-s Key features  measures ionising radiation doses in the rad to megarad range  applications include o space and military missions o high-energy physics experiments o nuclear power o radiotherapy  microscopically small sensor volume, measured in cubic micrometres, enables radical new designs of miniature radiation sensing systems  low-Z epoxy packaging and small silicon chip make a rugged sensor REM TOT600 chip, mounted on a CC10 carrier is the latest silicon sensor from REM, available in a variety of encapsulations and sensitivity values. There are several variants but the standard one , normally in stock, is REM RFT300-CC10G1. This contains a gate oxide of thickness 300nm, has a sensitivity as high as 1.5 mV/cGy and a package nearly transparent to radiation. It is suitable for many radiation beams and for space. Designed and Manufactured by REM Oxford Ltd 64a Acre End St Eynsham Oxford OX29 4PD England t.+44 1865 880 050 [email protected] www.radfet.com Authorised Sales Representative Phoenix Semiconductor Limited 46 High Street Husbands Bosworth L...