STFI26NM60N

STFI26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in an I²PAKFP package Datasheet - production data 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1) S(3) Features Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A  Fully insulated and low profile package with increased creepage path from pin to heatsink plate  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Order code STFI26NM60N AM01475v1_no Tab_noZen Table 1: Device summary Marking Package 26NM60N I²PAKFP (TO-281) Packaging Tube December 2016 DocID022495 Rev 4 This is information on a product in full production. 1/12 www.st.com Contents Contents STFI26NM60N 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits .................................................................