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C3284 Dataheets PDF



Part Number C3284
Manufacturers Sanken electric
Logo Sanken electric
Description 2SC3284
Datasheet C3284 DatasheetC3284 Datasheet (PDF)

LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC3284 VCBO 150 VCEO 150 VEBO IC IB PC Tj Tstg 5 14 3 125(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC3284 Unit ICBO IEBO V(BR)CEO VCB=150V VEB=5V IC=25mA 100max 100max 150min µA µA V hFE VCE(sat) fT COB VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A.

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LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC3284 VCBO 150 VCEO 150 VEBO IC IB PC Tj Tstg 5 14 3 125(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC3284 Unit ICBO IEBO V(BR)CEO VCB=150V VEB=5V IC=25mA 100max 100max 150min µA µA V hFE VCE(sat) fT COB VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz 50min∗ 2.0max 60typ 200typ V MHz pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 60 12 5 10 –5 0.5 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.5 0.2typ 1.5typ 0.35typ External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Type No. b. Lot No. Collector Current IC(A) 750mA I C– V CE Characteristics (Typical) 14 650000mmAA 400mA 300mA 12 200mA 150mA 8 100mA 50mA 4 IB=20mA 0 0 12 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 14 10 2 Collector Current IC(A) –30˚C (Case Temp) Temp) 1 IC=10A 5A 0 0 0.2 0.4 0.6 0.8 1.0 Base Current IB(A) 125˚C 25˚C (Case 5 0 01 2 Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE DC Current Gain hFE h FE– I C Characteristics (Typical) 200 (VCE=4V) h FE– I C Temperature Characteristics (Typical) 200 (VCE=4V) 125˚C 100 Typ 50 100 25˚C –30˚C 50 θ j-a– t Characteristics 3 1 0.5 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 10 14 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 1014 0.1 1 10 100 Time t(ms) 1000 2000 Cut-off Frequency fT(MHZ) f T– I E Characteristics (Typical) (VCE=12V) 80 Typ 60 40 20 0 –0.02 –0.1 –1 Emitter Current IE(A) –10 Collector Current IC(A) Safe Operating Area (Single Pulse) 40 10 DC 100 1 0 m s1 m s ms 5 Pc–Ta Derating 130 100 Maximum Power Dissipation PC(W) With Infinite heatsink 1 Without Heatsink 0.5 Natural Cooling 0.2 3 10 100 Collector-Emitter Voltage VCE(V) 200 50 Without Heatsink 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 65 .


CS1698 C3284 S16A100N


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