Document
LAPT 2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
2SC3284
VCBO
150
VCEO
150
VEBO IC IB PC Tj Tstg
5 14 3 125(Tc=25°C) 150 –55 to +150
(Ta=25°C)
Unit V V V A A W °C °C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC3284 Unit
ICBO IEBO V(BR)CEO
VCB=150V VEB=5V IC=25mA
100max 100max 150min
µA µA V
hFE VCE(sat) fT COB
VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz
50min∗ 2.0max 60typ 200typ
V MHz pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
60 12 5 10 –5 0.5
IB2 ton tstg tf (A) (µs) (µs) (µs)
–0.5 0.2typ 1.5typ 0.35typ
External Dimensions MT-100(TO3P)
15.6±0.4 9.6
4.8±0.2 2.0±0.1
1.8 5.0±0.2
19.9±0.3 4.0 2.0
20.0min 4.0max
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Collector Current IC(A) 750mA
I C– V CE Characteristics (Typical)
14
650000mmAA
400mA
300mA
12
200mA
150mA
8 100mA
50mA 4
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 14
10 2
Collector Current IC(A)
–30˚C (Case Temp)
Temp)
1
IC=10A 5A
0
0
0.2 0.4
0.6 0.8
1.0
Base Current IB(A)
125˚C 25˚C
(Case
5
0 01 2 Base-Emittor Voltage VBE(V)
Transient Thermal Resistance θ j-a( ˚ C / W )
DC Current Gain hFE
DC Current Gain hFE
h FE– I C Characteristics (Typical)
200
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
(VCE=4V)
125˚C
100 Typ 50
100 25˚C –30˚C
50
θ j-a– t Characteristics
3
1 0.5
20 0.02
0.1 0.5 1 Collector Current IC(A)
5 10 14
20 0.02
0.1 0.5 1 Collector Current IC(A)
5 1014
0.1 1
10 100 Time t(ms)
1000 2000
Cut-off Frequency fT(MHZ)
f T– I E Characteristics (Typical)
(VCE=12V) 80
Typ 60
40
20
0 –0.02
–0.1
–1
Emitter Current IE(A)
–10
Collector Current IC(A)
Safe Operating Area (Single Pulse)
40
10
DC
100
1 0 m s1 m s ms
5
Pc–Ta Derating
130
100
Maximum Power Dissipation PC(W)
With Infinite heatsink
1 Without Heatsink
0.5 Natural Cooling
0.2 3
10 100 Collector-Emitter Voltage VCE(V)
200
50
Without Heatsink 3.5
0 0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
65
.