Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
KBPC3500 - KBPC3510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 35 Amperes
BR50M
0.728(18.50) 0.688(17.40)
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : Metal Case * Epoxy : UL94V-0 rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams
0.570 (14.50) 0.530(13.40)
0.685(16.70) 0.618(15.70)
1.130(28.70) 1.120(28.40)
0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71)
0.443 (11.25) 0.431 (10.95)
0.210(5.30) 0.200(5.10)
0.256(6.50) 0.248(6.30)
φ 0.100(2.50) 0.090(2.30)
1.011 (25.7) 0.893 (22.7)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
KBPC 3500
VRRM VRMS VDC IF(AV)
50 35 50
KBPC 3501
100 70 100
KBPC 3502
200 140 200
KBPC 3504
400 280 400 35
KBPC 3506
600 420 600
KBPC 3508
800 560 800
KBPC 3510
1000 700 1000
UNIT
V V V A
IFSM
400
A
I2t VF IR IR(H) RθJC RθJA TJ TSTG
660 1.1 10 200 1.5 10 - 40 to + 150 - 40 to + 150
A2S V μA μA °C/W °C °C °C
Note :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 03 : September 3, 2012
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( KBPC3500 - KBPC3510 )
AVERAGE FORWARD OUTPUT CURRENT AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
42
35
28
21
14 HEAT-SINK MOUNTING, Tc 7.5" x 3.5" x 4.6" THK.
7 (19cm x 9cm x 11.8cm) Al.-Finned plate
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
10
Pulse Width = 300 μs 1.0 1 % Duty Cycle
TJ = 25 °C 0.1
0.01 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
REVERSE CURRENT, MICROAMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
600
500 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
400 TJ = 50 °C
300
200
100
0 12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10 TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.010
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
FORWARD CURRENT, AMPERES
Page 2 of 2
Rev. 03 : September 3, 2012
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