N-Channel MOSFET. MDF4N60 Datasheet

MDF4N60 MOSFET. Datasheet pdf. Equivalent

MDF4N60 Datasheet
Recommendation MDF4N60 Datasheet
Part MDF4N60
Description N-Channel MOSFET
Feature MDF4N60; MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General De.
Manufacture MagnaChip
Datasheet
Download MDF4N60 Datasheet




MagnaChip MDF4N60
MDP4N60/MDF4N60
N-Channel MOSFET 600V, 4.6A, 2.0
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.6A
RDS(ON) 2.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
G
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP4N60
MDF4N60
600
±30
4.6 4.6*
2.9 2.9*
18.4 18.4*
92.5 34.7
0.74 0.28
9.25
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
May. 2011 Version 1.5
Symbol
RθJA
RθJC
MDP4N60
62.5
1.35
MDF4N60
62.5
3.6
Unit
oC/W
1 MagnaChip Semiconductor Ltd.



MagnaChip MDF4N60
Ordering Information
Part Number
MDP4N60TH
MDF4N60TH
MDP4N60TP
MDF4N60TP
Temp. Range
-55~150oC
-55~150oC
-55~150oC
-55~150oC
Package
TO-220
TO-220F
TO-220
TO-220F
Packing
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Pb Free
Pb Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
gfs
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Turn-On Delay Time
Coss
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 2.3A
VDS = 30V, ID = 2.3A
VDS = 480V, ID = 4.6A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 4.6A,
RG = 25Ω(3)
IS = 4.6A, VGS = 0V
IF = 4.6A, dl/dt = 100A/μs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 4.6A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=14.8mH, IAS=4.6A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min Typ Max Unit
600 -
3.0 -
--
-
V
5.0
1 μA
- - 100 nA
1.7 2.0 Ω
-4
-S
- 12.1
-
- 3.5 - nC
- 4.4 -
- 506 660
- 2.3 3 pF
- 58 75
- 12 -
- 20 -
ns
- 27 -
- 20 -
- 4.6 - A
- - 1.4 V
- 243 - ns
- 1.5 - μC
May. 2011 Version 1.5
2 MagnaChip Semiconductor Ltd.



MagnaChip MDF4N60
8
Vgs=5.5V
7 =6.0V
=6.5V
=7.0V
6 =8.0V
=10.0V
=15.0V
5
4
Notes
1. 250Pulse Test
2. TC=25
3
2
1
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
1. V = 10 V
2.5
GS
2. I = 2.3A
D
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
200
3.5
3.0
2.5
VGS=10.0V
2.0
V =20V
GS
1.5
1.0
0.5
02468
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
1.2
Notes :
1. VGS = 0 V
2. I = 250
D
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150-55
1
25
0.1
2468
VGS [V]
Fig.5 Transfer Characteristics
May. 2011 Version 1.5
10
3
Notes :
1. V = 0 V
GS
10 2.250s Pulse test
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.







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