C5417

2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F) Symbol 2SC4517 2SC4517A Unit Symbol Conditions 2SC4517 2SC4517A Unit VCBO VCEO VEBO IC IB PC Tj Tstg 900 1000 550 7 3(Pulse6) 1.5 30(Tc=25°C) 150 –55 to +150 V V V A A W °C °C ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 250 250 1 10 –5 0.15 IB2 (A) –0.45 ton (µs) 0.7max tstg (µs) 4max µA µA V V V MHz pF tf (µs) 0.5max 13.0min 16.9±0.3 8.4±0.2 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 Weight : Approx 2.0g BCE a. Type No. b. Lot No. Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) Collector Current IC(A) I C– V CE Characteristics (Typical) 3 400mA 300mA 200mA 150mA 2 100mA 1 IB=40mA VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical) 1.5 IC/IB=5 Const. I C– V BE Temperature Characteristics (Typical) (VCE=4V) 3 Collector Current IC(A) 1.0 VBE(sat) 0.5 2 1 0 0 1...