Dual MOSFET. APM4048DU4 Datasheet

APM4048DU4 MOSFET. Datasheet pdf. Equivalent

APM4048DU4 Datasheet
Recommendation APM4048DU4 Datasheet
Part APM4048DU4
Description Dual MOSFET
Feature APM4048DU4; APM4048DU4 Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/7.5A, RDS(ON.
Manufacture ANPEC
Datasheet
Download APM4048DU4 Datasheet




ANPEC APM4048DU4
APM4048DU4
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
N-Channel
40V/7.5A,
RDS(ON)=25m(typ.) @ VGS=10V
RDS(ON)=35m(typ.) @ VGS=4.5V
P-Channel
-40V/-6A,
RDS(ON)=37m
(typ.)
@
V=
GS
-10V
RDS(ON)=49m
(typ.)
@
V =-4.5V
GS
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
Compliant)
Applications
Power Management in LCD monitor/TV
Pin Description
D1
D2
S1
G1
S2
G2
Top View of TO-252-4
(3) (3)
D1 D2
(2) (5)
G1 G2
S1
(1)
N MOS
S2
(4)
P MOS
Ordering and Marking Information
APM4048D
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U4 : TO-252-4
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4048D U4 : APM4048D
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.4 - Jan., 2009
1
www.anpec.com.tw



ANPEC APM4048DU4
APM4048DU4
Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS
ID a
IDM a
IS a
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=25°C
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
PD Power Dissipation
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
RθJA a Thermal Resistance-Junction to Ambient
Note a : Surface Mounted on 1in2 pad area, t 10sec.
Note b : Current limited by bond wire.
Rating
N Channel P Channel
40 -40
±20
7.5 b
±20
-6 b
30
7.5 b
-20
-6 b
150
-55 to 150
25
10
5
50
Unit
V
A
A
°C
W
°C/W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=32V, VGS=0V
TJ=85°C
VDS=-32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=±20V, VDS=0V
VGS=10V, IDS=7.5A
VGS=-10V, IDS=-6A
VGS=4.5V, IDS=5A
VGS=-4.5V, IDS=-3.5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4048DU4
Unit
Min. Typ. Max.
40 -
-40 -
-
V
-
- -1
- - 30
µA
- - -1
- - -30
1.3 2.1 2.5
-1.3 -1.9 -2.5
V
- - ±100
- - ±100 nA
- 25 33
- 37 48
m
- 35 45
- 49 68
Copyright © ANPEC Electronics Corp.
Rev. B.4 - Jan., 2009
2
www.anpec.com.tw



ANPEC APM4048DU4
APM4048DU4
Electrical Characteristics (Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
APM4048DU4
Unit
Min. Typ. Max.
Diode Characteristics
VSDa Diode Forward Voltage
Dynamic Characteristics b
ISD=2A, VGS=0V
ISD=-2A, VGS=0V
N-Ch
P-Ch
-
-
0.8 1.1
-0.8 -1.1
V
RG Gate Resistance
N-Ch - 1.5 -
VGS=0V,VDS=0V,F=1MHz
P-Ch - 6.8 -
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
N-Channel
VGS=0V, VDS=20V,
Frequency=1.0MHz
P-Channel
VGS=0V, VDS=-20V,
Frequency=1.0MHz
N-Ch - 950 -
P-Ch - 1110 -
N-Ch - 115 -
P-Ch - 125 -
N-Ch - 75 -
P-Ch - 70 -
pF
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
N-Channel
VDD=20V, RL=20,
IDS=1A, VGEN=10V,
RG=6
P-Channel
VDD=-20V, RL=20,
IDS=-1A, VGEN=-10V,
RG=6
N-Ch -
13 25
P-Ch -
8 17
N-Ch -
10 19
P-Ch - 12.5 24
ns
N-Ch -
27 50
P-Ch -
40 73
N-Ch -
5 10
P-Ch -
15 28
N-Ch - 20 -
trr
Reverse Recovery Time N-Channel
ISD=7.5A, dlSD/dt =100A/µs P-Ch
-
19
-
ns
P-Channel
N-Ch - 13 -
Qrr Reverse Recovery Charge ISD=-6A, dlSD/dt =100A/µs
nc
P-Ch - 12 -
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=20V, VGS=10V,
IDS=7.5A
P-Channel
VDS=-20V, VGS=-10V,
IDS=-6A
N-Ch - 17.2 33
P-Ch - 17.5 34.5
N-Ch - 3.5 -
nC
P-Ch - 2.8 -
N-Ch - 5.3 -
P-Ch - 4 -
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright © ANPEC Electronics Corp.
Rev. B.4 - Jan., 2009
3
www.anpec.com.tw





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