Ordering number : EN5762
NPN Triple Diffused Planar Silicon Transistor
2SC5420
Inverter Lighting Applications
Features...
Ordering number : EN5762
NPN Triple Diffused Planar Silicon
Transistor
2SC5420
Inverter Lighting Applications
Features
High breakdown voltage (VCBO=1000V). High reliability (Adoption of HVP process). Adoption of MBIT process.
Package Dimensions
unit: mm 2069B-SMP-FD
[2SC5420]
10.2 4.5
1.3
2.7 3.0 8.8 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
VCBO VCEO VEBO IC ICP PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
1.2 0.8
2
13
2.55 2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Ratings 1000 450 9 5 10 1.75 50 150
–55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain
Storage Time Fall Time
ICBO ICES VCEO(SUS) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf
VCB=450V, IE=0 VCE=1000V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=2.5A, IB=0.5A IC=2.5A, IB=0.5A VCE=5V, IC=0.3A VCE=5V, IC=2.0A IC=2.5A, IB1=0.5A, IB2=–1.0A IC=2.5A, IB1=0.5A, IB2=–1.0A
Ratings
Unit
min typ max
10 µA
1.0 mA
450 V
1.0 mA
1.0 V
1.5 V
30 40 50
10
2.5 µs
0.15 µs
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