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SILICON TRANSISTOR. C1812 Datasheet

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SILICON TRANSISTOR. C1812 Datasheet






C1812 TRANSISTOR. Datasheet pdf. Equivalent




C1812 TRANSISTOR. Datasheet pdf. Equivalent





Part

C1812

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


NPN EPITAXIAL SILICON TRANSISTOR AM/FM I F AMPLIFIER,LOCAL OSCILATOR OF FM/VHF T UNER High Current Gain Bandwidth Produc t fT=1100MHz 2SC1812 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUT E MAXIMUM RATINGS Characteristic Collec tor-Base Voltage Collector-Emitter Volt age Emitter-Base Voltage Collector Curr ent Collector Diss.
Manufacture

WEJ

Datasheet
Download C1812 Datasheet


WEJ C1812

C1812; ipation Ta=25 oC* Junction Temperature S torage Temperature Symbol VCBO VCEO VE BO Ic PD Tj Tstg Rating 30 15 5 50 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW OC OC Electrical Characteristics ( Ta=25 oC) Parameter Symbol MIN. TYP. MAX. Unit Condition Collector-Base Br eakdown Voltage Collector-Emitter Break down Voltage# Emitter-Base Breakdown Vo ltage Collector-Ba.


WEJ C1812

se Cutoff Current Emitter-Base Cutoff Cu rrent DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capa citance Collector-Gain-Bandwidth Produc t BVCBO BVCEO BVEBO ICBO IEBO HFE VCE( sat) Cob fT 30 15 5 28 100 1.3 700 110 0 50 50 300 0.5 1.7 V V V nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V , IC=1mA IC=10mA, .


WEJ C1812

IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC= 5mA *Total Device Dissipation:FR=1X0.7 5X0.062 in Board Derate 25oC # Pulse Te st: Pulse Width 300uS Duty cycle 2% DEV ICE MARKING: 2SC1812=J8 .

Part

C1812

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


NPN EPITAXIAL SILICON TRANSISTOR AM/FM I F AMPLIFIER,LOCAL OSCILATOR OF FM/VHF T UNER High Current Gain Bandwidth Produc t fT=1100MHz 2SC1812 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUT E MAXIMUM RATINGS Characteristic Collec tor-Base Voltage Collector-Emitter Volt age Emitter-Base Voltage Collector Curr ent Collector Diss.
Manufacture

WEJ

Datasheet
Download C1812 Datasheet




 C1812
NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR
OF FM/VHF TUNER
High Current Gain Bandwidth
Product fT=1100MHz
2SC1812
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 oC*
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
30
15
5
50
225
150
-55~150
(Ta=25 oC)
Unit
V
V
V
mA
mW
OC
OC
Electrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN. TYP. MAX. Unit
Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
Collector-Gain-Bandwidth Product
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
Cob
fT
30
15
5
28 100
1.3
700 1100
50
50
300
0.5
1.7
V
V
V
nA
nA
V
PF
MHz
IC=100 A IE=0
IC=1mA IB=0
IE=100 A IC=0
VCB=12V, VE=0
VCB=3V, IC=0
VCB=5V, IC=1mA
IC=10mA, IB=1mA
VCB=10V, IE=10,f=1MHz
VCE=5V, IC=5mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SC1812=J8











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