Document
Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
• High-speed switching: Fall time tf < 0.2 µs • Low collector-emitter saturation voltage: Collector-emitter satura-
tion voltage VCE(sat) < 3 V • Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
18.6±0.5 (2.0)
Solder Dip
/ ■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
1 700
3.3±0.3
5.5±0.3
V
n d stag tinue Collector-emitter voltage (E-B short) VCES
1 700
(2.0)
V
a e cle con Collector-emitter voltage (Base open) VCEO
600
V
lifecy , dis Emitter-base voltage (Collector open) VEBO
7
V
n u ct ped Base current
IB
11
A
te tin Produ ed ty Collector current
IC
20
A
ur tinu Peak collector current *
ICP
30
A
ing fo iscon Collector power dissipation
PC
70
W
in n llow d d Ta = 25°C
3.5
s fo lane Junction temperature
Tj
150
°C
a o lude e, p Storage temperature
Tstg −55 to +150 °C
c d inc e typ Note) *: Non-repetitive peak collector current
M is continueintenanc ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base cutoff current (Emitter open)
Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturation voltage
ICBO
IEBO hFE VCE(sat) VBE(sat)
VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 10 A, IB = 2.5 A
5.45±0.3 10.9±0.5
5˚ 12 3
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Min Typ Max Unit
50
µA
1
mA
50
µA
6
12
3
V
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
tstg IC = 10 A, Resistance loaded
3.0
µs
Fall time
tf
IB1 = 2.5 A, IB2 = −5.0 A
0.2
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00161BED
1
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/ Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
e ) (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
pe maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
c ty defect which may arise later in your equipment. n d ge. ed Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
sta tinu mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire le n or preventing glitch .