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C5591 Dataheets PDF



Part Number C5591
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SC5591
Datasheet C5591 DatasheetC5591 Datasheet (PDF)

Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle • High-speed switching: Fall time tf < 0.2 µs • Low collector-emitter saturation voltage: Collector-emitter satura- tion voltage VCE(sat) < 3 V • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ .

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Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle • High-speed switching: Fall time tf < 0.2 µs • Low collector-emitter saturation voltage: Collector-emitter satura- tion voltage VCE(sat) < 3 V • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 18.6±0.5 (2.0) Solder Dip / ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 1 700 3.3±0.3 5.5±0.3 V n d stag tinue Collector-emitter voltage (E-B short) VCES 1 700 (2.0) V a e cle con Collector-emitter voltage (Base open) VCEO 600 V lifecy , dis Emitter-base voltage (Collector open) VEBO 7 V n u ct ped Base current IB 11 A te tin Produ ed ty Collector current IC 20 A ur tinu Peak collector current * ICP 30 A ing fo iscon Collector power dissipation PC 70 W in n llow d d Ta = 25°C 3.5 s fo lane Junction temperature Tj 150 °C a o lude e, p Storage temperature Tstg −55 to +150 °C c d inc e typ Note) *: Non-repetitive peak collector current M is continueintenanc ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base cutoff current (Emitter open) Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturation voltage ICBO IEBO hFE VCE(sat) VBE(sat) VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 10 A, IB = 2.5 A 5.45±0.3 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Min Typ Max Unit 50 µA 1 mA 50 µA 6 12  3 V 1.5 V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz Storage time tstg IC = 10 A, Resistance loaded 3.0 µs Fall time tf IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJD00161BED 1 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product / Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions e ) (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute pe maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any c ty defect which may arise later in your equipment. n d ge. ed Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure sta tinu mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire le n or preventing glitch .


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