Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1590
N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits.
FEATURES • Directly driven by ICs having a 5 V power source. • Not necessary to consider driving current because of its high
input impedance. • Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER 2SK1590
Marking: G16
PACKAGE SC-59 (Mini Mold)
1.1 to 1.4 0.3
2.9 ±0.2 0.95 0.95
PACKAGE DRAWING (Unit: mm)
+0.1 –0.05
2.8 ±0.2 1.5
0.65
+0.1 –0.15
0.4
2
3
+0.1 –0.05
0.4
1 Marking
+0.1 –0.06
0.16
0 to 0.1
1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) Drain Current (pulse) Note
ID(DC) ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
60 ±20 ±200 ±400 200 150 −55 to +150
V V mA mA mW °C °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D13628EJ4V0DS00 (4th edition) Date Published May 2006 NS CP(K) Printed in Japan
2006
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
IGSS VGS(off) | yfs | RDS(on)1
VGS = ±20 V, VDS = 0 V VDS = 5.0 V, ID = 1.0 μA VDS = 5.0 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA
RDS(on)2 VGS = 10 V, ID = 10 mA
Input Capacitance
Ciss VDS = 5.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 5.0 V, ID = 10 mA
Rise Time
tr VGS = 5.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG PG.
VGS 0
τ τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
0 10%
VGS 90%
ID 90%
ID
Wave Form
0 10% td(on)
ID tr td(off)
90% 10% tf
ton toff
2SK1590
MIN.
0.8 20
TYP.
1.2 65 3.2 2.4 26 20 4.0 50 140 200 190
MAX. 1.0 ±1.0 1.8
6.0 3.0
UNIT μA μA V mS Ω Ω pF pF pF ns ns ns ns
2
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Data Sheet D13628EJ4V0DS
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK1590
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Data Sheet D13628EJ4V0DS
3
2SK1590
4
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Data Sheet D13628EJ4V0DS
2SK1590
• The information in this document is current as of May, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
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