N-Channel MOSFET
SMD Type
■ Features
● VDS (V) = 60V ● ID = 0.2 A ● RDS(ON) < 3Ω (VGS = 10V) ● RDS(ON) < 6Ω (VGS = 4V)
N-Channel MOSFET
...
Description
SMD Type
■ Features
● VDS (V) = 60V ● ID = 0.2 A ● RDS(ON) < 3Ω (VGS = 10V) ● RDS(ON) < 6Ω (VGS = 4V)
N-Channel MOSFET
2SK1590
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
+0.12.4 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
MOSFET
Unit: mm
0.1 +0.05 -0.01
1. Gate 2. Source 3. Drain
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.1: PW ≤ 10ms, Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Symbol VDS VGS ID IDM PD TJ Tstg
Rating 60
±20 0.2 0.4 200 150 -55 to 150
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Symbol VDSS IDSS IGSS VGS(off)
RDS(On)
gFS Ciss Coss Crss td(on)
tr td(off)
tf
Test Conditions ID=250μA, VGS=0V VDS=60V, VGS=0V VDS=0V, VGS=±20V VDS=5V , ID=1uA VGS=10V, ID=10mA VGS=4V, ID=10mA VDS=5V, ID=10mA
VGS=0V, VDS=5V, f=1MHz
VGS(on)=5V, VDS=5V, ID=10mA,RL=500Ω,RG=10Ω
■ Marking
Marking
G16
Unit V
A mW ℃
Min Typ Max Unit
60 V
1 uA
±10 uA
0.8 1.8 V
3 Ω
6
20 65
mS
26
20 pF
4
50
140 ns
200
190
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SMD Type
■ Typical Characterisitics
N-Channe...
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