AOB12N65

AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 750V@150℃ 12A < 0.72Ω TO-220 Top View TO-220F TO-263 D2PAK D D AOT12N65 S D G Orderable Part Number AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L AOTF12N65 GD S Package Type TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green G AOB12N65 S G S Form Tube Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)12N65 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 7.7 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to...