Document
UNISONIC TECHNOLOGIES CO., LTD UTP45N02
N-CHANNEL ENHANCEMENT MODE
Power MOSFET
DESCRIPTION
As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
FEATURES
* 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve
SYMBOL
2.Drain
*Pb-free plating product number: UTP45N02L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTP45N02-TN3-R
UTP45N02L-TN3-R
UTP45N02-TN3-T
UTP45N02L-TN3-T
Package
TO-252 TO-252
Pin Assignment
12
3
GD
S
GD
S
Packing
Tape Reel Tube
www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R502-180.A
UTP45N02
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 20 V
Gate-Source Voltage
VGSS ±10 V
Continuous Drain Current
Power Dissipation Derate Above 25
ID 45 A
PD
90 0.606
W W/
Junction Temperature Storage Temperature
TJ TSTG
+175 -55 ~ +175
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case
SYMBOL θJA θJC
MIN
TYP
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
MAX 80 1.65
UNIT /W /W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current
BVDSS IDSS IGSS
VGS =0V, ID =250 µA VDS=20V, VGS =0 V VGS = ±10 V
ON CHARACTERISTICS Gate to Source Threshold Voltage Drain-to-Source On Resistance
VGS(TH) VDS =VGS, ID =250 µA RDS(ON) VGS = 5V, ID =45 A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS =15 V, VGS =0V, f=1MHz
SWITCHING PARAMETERS Turn-ON Time Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Turn-OFF Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tON tD(ON)
tR tD(OFF)
tF tOFF QG QGS QGD
VGS =5 V, VDD =15 V, ID 45 A, RGS = 5 , RL = 0.33
VGS=0V~10V VDD = 16V, VGS=0V ~ 5 V ID 45A, VGS=0V~ 1 V RL = 0.35Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD ISD=45 A
Reverse Recovery Time
tRR ISD = 45 A,dISD /dt = 100 A/µs
MIN 20
1
TYP MAX UNIT
1 ±100
V µA nA
2V 0.022 Ω
1300 724 250
pF
260
15
160 20
ns
20
60
50 60
30 36 nC
1.5 1.8
1.5 V 125 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-180.A
UTP45N02
TYPICAL CHARACTERISTICS
Power MOSFET
On-State Drain Current,ID(ON) (A)
Drain Current,ID (A)
Drain to Source On Resistance,RDS(On) (m )
Normalized On Resistance
Power Dissipation Multiplier
Normalized Power Dissipation vs 1.2 Temperature Derating
1.0
0.8
0.6
0.4
0.2 0 0 25 50 75 100 125 150 175 Case Temperature,TC ( )
UNISONIC TECHNOLOGIES CO., LTD
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Drain Current,ID (A)
Maximum Continuous Drain Current 50 vs Case Temperature
40
30
20
10
0 25 50 75 100 125 150 175
Case Temperature,TC ( )
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QW-R502-180.A
UTP45N02
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Avalanche Current,IAS (A)
Switching Time (ns)
Normalized Gate Threhold Voltage
Normalized Gate Threshold Voltage vs Junction Temperature 2.0
VGS=VDS,ID=250 A
1.5
1.0 0.5
0 -80 -40 0 40 80 120 160 200
Junction Temperature,TJ ( )
2500
Capacitance vs. Drain to Source Voltage
VGS=0V,f=1MHZ
2000
1500
1000
500
0 0
CISS COSS
CRSS
5 10 15 20 Drain to Source Voltage,VDS (V)
Drain to Source Voltage,VDS (V)
Normalized Drain to Source Breakdown Voltage
Normalized Drain to Source Breakdown Voltage vs Junction Temperature
2.0 ID=250 A
1.5
1.0
0.5
0 -80 -40 0 40 80 120 160 200
Junction Temperature,TJ ( )
Normalized Switching Waveforms for
20
Constant Gate Current
5.00
VDD=BVDSS
VDD=BVDSS
15 RL=0.44
3.75
IG(REF)=0.5mA
VGS=5V
10
Plateau Voltage in
2.50
Descending Order:
VDD=BVDSS
5
VDD=0.75BVDSS VDD=0.50BVDSS
1.25
VDD=0.25BVDSS
00
20
G(REF) G(ACT)
Time,t (
s)
80 G(REF) G(ACT)
UNISONIC TECHNOLOGIES CO., LTD
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4 of 5
QW-R502-180.A
Capacitance,C (pF)
Gate to Source Voltage,VGS (V)
UTP45N02
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Peak Current,IDM (A)
Drain Current,ID (A)
Normalized Thermal Impedance,Z JC
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to.