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UTP45N02 Dataheets PDF



Part Number UTP45N02
Manufacturers UTC
Logo UTC
Description N-CHANNEL ENHANCEMENT MODE
Datasheet UTP45N02 DatasheetUTP45N02 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTP45N02 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. „ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve „ SYMBOL 2.Drain *Pb-free plating product number: UTP45N02L 1.Ga.

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UNISONIC TECHNOLOGIES CO., LTD UTP45N02 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. „ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve „ SYMBOL 2.Drain *Pb-free plating product number: UTP45N02L 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UTP45N02-TN3-R UTP45N02L-TN3-R UTP45N02-TN3-T UTP45N02L-TN3-T Package TO-252 TO-252 Pin Assignment 12 3 GD S GD S Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-180.A UTP45N02 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (Ta = 25 , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Continuous Drain Current Power Dissipation Derate Above 25 ID 45 A PD 90 0.606 W W/ Junction Temperature Storage Temperature TJ TSTG +175 -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) MAX 80 1.65 UNIT /W /W PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current BVDSS IDSS IGSS VGS =0V, ID =250 µA VDS=20V, VGS =0 V VGS = ±10 V ON CHARACTERISTICS Gate to Source Threshold Voltage Drain-to-Source On Resistance VGS(TH) VDS =VGS, ID =250 µA RDS(ON) VGS = 5V, ID =45 A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS =15 V, VGS =0V, f=1MHz SWITCHING PARAMETERS Turn-ON Time Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Turn-OFF Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tON tD(ON) tR tD(OFF) tF tOFF QG QGS QGD VGS =5 V, VDD =15 V, ID 45 A, RGS = 5 , RL = 0.33 VGS=0V~10V VDD = 16V, VGS=0V ~ 5 V ID 45A, VGS=0V~ 1 V RL = 0.35Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=45 A Reverse Recovery Time tRR ISD = 45 A,dISD /dt = 100 A/µs MIN 20 1 TYP MAX UNIT 1 ±100 V µA nA 2V 0.022 Ω 1300 724 250 pF 260 15 160 20 ns 20 60 50 60 30 36 nC 1.5 1.8 1.5 V 125 ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-180.A UTP45N02 „ TYPICAL CHARACTERISTICS Power MOSFET On-State Drain Current,ID(ON) (A) Drain Current,ID (A) Drain to Source On Resistance,RDS(On) (m ) Normalized On Resistance Power Dissipation Multiplier Normalized Power Dissipation vs 1.2 Temperature Derating 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 Case Temperature,TC ( ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current,ID (A) Maximum Continuous Drain Current 50 vs Case Temperature 40 30 20 10 0 25 50 75 100 125 150 175 Case Temperature,TC ( ) 3 of 5 QW-R502-180.A UTP45N02 „ TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Avalanche Current,IAS (A) Switching Time (ns) Normalized Gate Threhold Voltage Normalized Gate Threshold Voltage vs Junction Temperature 2.0 VGS=VDS,ID=250 A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 Junction Temperature,TJ ( ) 2500 Capacitance vs. Drain to Source Voltage VGS=0V,f=1MHZ 2000 1500 1000 500 0 0 CISS COSS CRSS 5 10 15 20 Drain to Source Voltage,VDS (V) Drain to Source Voltage,VDS (V) Normalized Drain to Source Breakdown Voltage Normalized Drain to Source Breakdown Voltage vs Junction Temperature 2.0 ID=250 A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 Junction Temperature,TJ ( ) Normalized Switching Waveforms for 20 Constant Gate Current 5.00 VDD=BVDSS VDD=BVDSS 15 RL=0.44 3.75 IG(REF)=0.5mA VGS=5V 10 Plateau Voltage in 2.50 Descending Order: VDD=BVDSS 5 VDD=0.75BVDSS VDD=0.50BVDSS 1.25 VDD=0.25BVDSS 00 20 G(REF) G(ACT) Time,t ( s) 80 G(REF) G(ACT) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-180.A Capacitance,C (pF) Gate to Source Voltage,VGS (V) UTP45N02 „ TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Peak Current,IDM (A) Drain Current,ID (A) Normalized Thermal Impedance,Z JC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to.


MBRF10100 UTP45N02 ANR-25


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