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MDD 220
High Power Diode Modules
IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 MDD 220-18N1
312
3 2
1
Symbol IFRMS IFAVM IFSM
∫i2dt
TVJ TVJM Tstg VISOL Md Weight
Conditions
Maximum Ratings
TVJ = TVJM TC = 100°C; 180° sine
TVJ = 45°C; VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
450 270
8500 9000
7500 8000
360 000 340 000
280 000 260 000
-40...+150 150
-40...+125
A A
A A
A A
A2s A2s
A2s A2s
°C °C °C
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
Mounting torque (M5) Terminal connection torque (M8)
3000 3600
V~ V~
2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in.
Typical including screws
320 g
Symbol
Test Conditions
Characteristic Values
IRRM VF VT0 rT RthJC
RthJK
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
For power-loss calculations only TVJ = TVJM
per diode; DC current per module per diode; DC current per module
other values see Fig. 6/7
40
1.4
0.75 0.9
0.129 0.065 0.169 0.0845
mA
V
V mΩ
K/W K/W K/W K/W
QS TVJ = 125°C, IF = 400 A; -di/dt = 50 A/µs IRM
dS Creepage distance on surface dA Strike distance through air a Maximum allowable acceleration
760 µC 275 A
12.7 mm 9.6 mm 50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Features • Direct copper bonded Al2O3 -ceramic
base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Dimensions in mm (1 mm = 0.0394")
20 12
Threaded spacer for higher Anode/Cathode construction: Type ZY 250, m1a4terial brass
419
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-3
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MDD 220
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 ∫i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
419
IXYS reserves the right to change limits, test conditions and dimensions
2-3
© 2004 IXYS All rights reserved
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MDD 220
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.15 K/W ZthJC 0.10
0.05
0.000 10-3 10-2 10-1 100
0.20 K/W ZthJK 0.15
0.10
0.05
0.00 10-3 10-2 10-1 100
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
Fig. 6 Transient thermal impedance junction to case (per diode)
30° DC
RthJC for various conduction angles d:
d
DC 180° 120°
60° 30°
RthJC (K/W)
0.129 0.131 0.132 0.132 0.133
101 s t
Constants for ZthJC calculation:
i
1 102 2
3
Rthi (K/W)
0.0035 0.0165 0.1091
ti (s)
0.0099 0.168 0.456
Fig. 7 Transient thermal impedance junction to heatsink (per diode)
30°
DC RthJK for various conduction angles d:
d
DC 180° 120°
60° 30°
RthJK (K/W)
0.169 0.171 0.172 0.172 0.173
101 s t
Constants for ZthJK calculation:
i
1 2 102 3 4
Rthi (K/W)
0.0035 0.0165 0.1091 0.04
ti (s)
0.0099 0.168 0.456 1.36
419
3-3
.