Document
N-Channel Enhancement Mode Power MOSFET
AF9945N
Features
- Low On-resistance - Single Drive Requirement - Surface Mount Package
General Description
The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Product Summary
BVDSS (V) 60
rDS(on) (mΩ) 90
ID (A) 3.5
Pin Assignments
S1 1 G1 2 S2 3 G2 4
SOP-8
8 D1 7 D1 6 D2 5 D2
Pin Descriptions
Pin Name
S1/2 G1/2 D1/2
Description
Source Gate Drain
Ordering information
A X 9945N X X X
Feature F :MOSFET
PN
Package S: SOP-8
Lead Free
Blank : Normal L : Lead Free Package
Packing
Blank : Tube or Bulk A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 12, 2004 1/5
N-Channel Enhancement Mode Power MOSFET
AF9945N
Absolute Maximum Ratings
Symbol
VDS VGS
Drain-Source Voltage Gate-Source Voltage
Parameter
ID Continuous Drain Current (Note 1)
IDM
PD
TSTG TJ
Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
TA=25ºC TA=70ºC
TA=25ºC
Rating
60 ±25 3.5 2.8 20
2 0.016 -55 to 150 -55 to 150
Units V V
A
A W W/ºC ºC ºC
Thermal Resistance Ratings
Symbol
Parameter
Value
Rthj-a Thermal Resistance Junction-Ambient (Note 1)
Max.
62.5
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Units oC/W
Electrical Characteristics at TJ=25ºC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS Drain-Source Breakdown Voltage
∆BVDSS /∆TJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Static Drain-Source On-Resistance
(Note 3)
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage
Qg Total Gate Charge (Note 3)
Qgs Gate-Source Charge
Qgd Gate-Drain (“Miller”) Charge
td(on)
Turn-On Delay Time (Note 3)
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall-Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=3A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=60V, VGS=0V, TJ=25ºC VDS=48V, VGS=0V, TJ=70ºC VGS=±25V ID=3A, VDS=48V, VGS=4.5V
VDS=30V, ID=1A, RG=3.3Ω, VGS=10V RD=30Ω
VGS=0V, VDS=25V, f=1.0MHz
f=1.0MHz
60 -
- 0.04
--1-6
--
--
--6 -2 -3 -6 -5 - 16 -3 - 510 - 55 - 35 - 1.3
Max. -
-
90 120
3 -
10
Units V
V/oC
mΩ mΩ V S
uA
25
±100 10 810 -
uA
nA nC nC nC ns ns ns ns pF pF pF Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage (Note 3) trr Reverse Recovery Time (Note 3)
Qrr Reverse Recovery Charge
Note3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Test Conditions
IS=1.7A, VGS=0V IS=4A, VGS=0V, dl/dt=100A/µs
Min.
-
Typ.
27 32
Max.
1.2 -
Units
V ns nC
Anachip Corp. www.anachip.com.tw
Rev. 1.0 Oct 12, 2004 2/5
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics
AF9945N
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Anachip Corp. www.anachip.com.tw
Rev. 1.0 Oct 12, 2004 3/5
N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued)
AF9945N
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp. www.anachip.com.tw
Rev. 1.0 Oct 12, 2004 4/5
N-Channel Enhancement Mode Power MOSFET
AF9945N
Marking Information
SOP-8L
( Top View )
8
Logo Part Number
9945N AA Y W X
1
Package Information
Package Type: SOP-8L
~
Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code
A1 A2 E AH
C
D 7 (4X)
L VIEW "A"
0.015x45 7 (4X)
e
Symbol
A A1 A2 B C D E e H L y θ
B
y
Dimensions In Millimeters
Min.
Nom.
Max.
1.40 1.60 1.75
0.10 - 0.25
1.30 1.45 1.50
0.33 0.41 0.51
0.19 0.20 0.25
4.80 5.05 5.30
3.70 3.90 4.10
- 1.27 -
5.79 5.99 6.20
0.38 0.71 1.27
- - 0.10
0O - 8O
VIEW "A"
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040 - 0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075 0.008
0.010
0.189
0.199
0.209
0.146
0.154
0.161
- 0.050 -
0.228
0.236
0.244
0.015
0.028
0.050
- - 0.004
0O - 8O
Anachip Corp. www.anachip.com.tw
Rev. 1.0 Oct 12, 2004 5/5
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