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AF9945N Dataheets PDF



Part Number AF9945N
Manufacturers Anachip
Logo Anachip
Description N-Channel Enhancement Mode Power MOSFET
Datasheet AF9945N DatasheetAF9945N Datasheet (PDF)

N-Channel Enhancement Mode Power MOSFET AF9945N „ Features - Low On-resistance - Single Drive Requirement - Surface Mount Package „ General Description The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. „ Product Summary BVDSS (V) 60 rDS(on) (mΩ) 90 ID (A) 3.5 „ Pin Assignments S1 1 G1 2 S2 3 G2 4 SOP-8 8 D1 7 D1 6 D2 5 D2 „ Pin Descriptions Pin Name S1/2 G1/2 D1/2 De.

  AF9945N   AF9945N


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N-Channel Enhancement Mode Power MOSFET AF9945N „ Features - Low On-resistance - Single Drive Requirement - Surface Mount Package „ General Description The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. „ Product Summary BVDSS (V) 60 rDS(on) (mΩ) 90 ID (A) 3.5 „ Pin Assignments S1 1 G1 2 S2 3 G2 4 SOP-8 8 D1 7 D1 6 D2 5 D2 „ Pin Descriptions Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain „ Ordering information A X 9945N X X X Feature F :MOSFET PN Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 12, 2004 1/5 N-Channel Enhancement Mode Power MOSFET AF9945N „ Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Continuous Drain Current (Note 1) IDM PD TSTG TJ Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating 60 ±25 3.5 2.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC „ Thermal Resistance Ratings Symbol Parameter Value Rthj-a Thermal Resistance Junction-Ambient (Note 1) Max. 62.5 Note 1: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135oC/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Units oC/W „ Electrical Characteristics at TJ=25ºC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. BVDSS Drain-Source Breakdown Voltage ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Static Drain-Source On-Resistance (Note 3) VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Total Gate Charge (Note 3) Qgs Gate-Source Charge Qgd Gate-Drain (“Miller”) Charge td(on) Turn-On Delay Time (Note 3) tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=3A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=60V, VGS=0V, TJ=25ºC VDS=48V, VGS=0V, TJ=70ºC VGS=±25V ID=3A, VDS=48V, VGS=4.5V VDS=30V, ID=1A, RG=3.3Ω, VGS=10V RD=30Ω VGS=0V, VDS=25V, f=1.0MHz f=1.0MHz 60 - - 0.04 --1-6 -- -- --6 -2 -3 -6 -5 - 16 -3 - 510 - 55 - 35 - 1.3 Max. - - 90 120 3 - 10 Units V V/oC mΩ mΩ V S uA 25 ±100 10 810 - uA nA nC nC nC ns ns ns ns pF pF pF Ω „ Source-Drain Diode Symbol Parameter VSD Forward On Voltage (Note 3) trr Reverse Recovery Time (Note 3) Qrr Reverse Recovery Charge Note3: Pulse width ≤ 300us, duty cycle ≤ 2%. Test Conditions IS=1.7A, VGS=0V IS=4A, VGS=0V, dl/dt=100A/µs Min. - Typ. 27 32 Max. 1.2 - Units V ns nC Anachip Corp. www.anachip.com.tw Rev. 1.0 Oct 12, 2004 2/5 N-Channel Enhancement Mode Power MOSFET „ Typical Performance Characteristics AF9945N Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 Oct 12, 2004 3/5 N-Channel Enhancement Mode Power MOSFET „ Typical Performance Characteristics (Continued) AF9945N Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 Oct 12, 2004 4/5 N-Channel Enhancement Mode Power MOSFET AF9945N „ Marking Information SOP-8L ( Top View ) 8 Logo Part Number 9945N AA Y W X 1 „ Package Information Package Type: SOP-8L ~ Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code A1 A2 E AH C D 7 (4X) L VIEW "A" 0.015x45 7 (4X) e Symbol A A1 A2 B C D E e H L y θ B y Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 - 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 - 1.27 - 5.79 5.99 6.20 0.38 0.71 1.27 - - 0.10 0O - 8O VIEW "A" Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 - 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 - 0.050 - 0.228 0.236 0.244 0.015 0.028 0.050 - - 0.004 0O - 8O Anachip Corp. www.anachip.com.tw Rev. 1.0 Oct 12, 2004 5/5 .


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