AF9902M

AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product „ Product Summary CH BVDSS (V) RDS(ON) (mΩ) N 30 40 P -30 70 ID (A) 4.3 -3.3 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. „ Pin Assignments „ Pin Descriptions N1G 1 N1D/P1D 2 N1S/N2S 3 N2G 4 SO-8 8 P1G 7 P1S/P2S 6 N2D/P2D 5 P2G „ Ordering information Pin Name N1G N1D/P1D N1S/N2S N2G P2G N2D/P2D P1S/P2S P1G Description Gate (NMOS1) Drain(NMOS1) / Drain(PMOS1) Source(NMOS1) / Source(NMOS2) Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) / Drain(PMOS2) Source(PMOS1) / Source(PMOS2) Gate (PMOS1) A X 9902M X X Feature F :MOSFET PN „ Block Diagram Package S: SO-8 Packing Blank : Tube or Bulk A : Tape & Reel P1S P1G P1N1D N1G N1S P2S P2G P2N2D N2G N2S This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 22, 2005 1/8 AF9902M 2N and 2P-Channel Enhancement Mode Power ...