N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
AF9928N
Features
- Low On-resistance - Capable of 2.5V Gate Drive - Optimal ...
Description
N-Channel Enhancement Mode Power MOSFET
AF9928N
Features
- Low On-resistance - Capable of 2.5V Gate Drive - Optimal DC/DC battery application
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Product Summary
BVDSS (V) 20
rDS(on) (mΩ) 23
ID (A) 5
Pin Assignments
Pin Descriptions
D1 1 S1 2 S1 3 G1 4
TSSOP-8
8 D2 7 S2 6 S2 5 G2
Pin Name
S1/2 G1/2 D1/2
Description
Source Gate Drain
Ordering information
A X 9928N X X X
Feature F :MOSFET
PN Package
Lead Free
Packing
TS: TSSOP-8 Blank : Normal
Blank : Tube or Bulk
L : Lead Free Package A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 11, 2005 1/5
N-Channel Enhancement Mode Power MOSFET
AF9928N
Absolute Maximum Ratings
Symbol
VDS VGS
Drain-Source Voltage Gate-Source Voltage
Parameter
ID Drain Current (Note 1), at VGS=4.5V
IDM
PD
TSTG TJ
Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
at TA=25ºC at TA=70ºC
at TA=25ºC
Rating
20 ±12
5 3.5 25 1 0.008 -55 to 150 -55 to 150
Units V V
A
A W W/ºC ºC ºC
Thermal Data
Symbol
Para...
Similar Datasheet