MPS650

MPS650 MPS651 NPN MPS750 MPS751 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS650, MPS750 series devices are complementary silicon transistors designed for general purpose amplifier and switching applications requiring high gain at high collector current. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC MPS650 MPS750 60 MPS651 MPS751 80 40 60 5.0 2.0 625 1.5 -65 to +150 200 83.3 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=60V ICBO VCB=80V IEBO VEB=4.0V BVCBO IC=100μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=1.0A, IB=100mA VCE(SAT) IC=2.0A, IB=200mA VBE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=2.0V, IC=1.0A hFE VCE=2.0V, IC=50mA hFE VCE=2.0V, IC=500mA hFE VCE=2.0V, IC=1.0A hFE VCE=2.0V, IC=2.0A fT VCE=5.0V, IC=50mA, f=100MHz MPS650 MPS750 MIN MAX - 100 -- 100 60 40 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 - MPS651 MPS751 MIN MAX -- 100 - 100 80 60 5.0 - 0.3 - 0.5 - 1.2 - 1.0 75 75 75 40 75 - UNITS V V V A mW W °C °C/W °C/W UNITS nA nA nA V V V V V V V MHz R1 (2-December 2014) MPS650 MPS651 NPN MPS750 MPS751 PNP COMPLEMENTA...