PB210BD

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ ID 10A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAs EAS PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 10 6 40 18 16.5 41 17 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 3 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V LIMITS UNIT MIN TYP MAX 100 1 1.5 2 V ±100 nA 1 µA 10 40 A REV 1.0 Aug-19-2009 1 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PB210BD TO-252 Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) g...