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SE10DB, SE10DD, SE10DG, SE10DJ
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
eSMP® Series TO-263AC (SMPD)
K
1
2 Top View
Bottom View
SE10DX
PIN 1
K
PIN 2
HEATSINK
FEATURES • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop • ESD capability • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS General purpose, power line polarity protection, in both consumer and automotive applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
100 V, 200 V, 400 V, 600 V
IFSM VF at IF = 10 A (TA = 125 °C)
IR
110 A 0.96 V 15 μA
TJ max.
175 °C
Package
TO-263AC (SMPD)
Diode variations
Single
MECHANICAL DATA
Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SE10DB
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
VRRM IF (1) IF (2)
IFSM
100
Operating junction and storage temperature range
Notes (1) With heatsink (2) Free air, mounted on recommended copper pad area
TJ, TSTG
SE10DD SE10DG 200 400 10 3.0
110
-55 to +175
SE10DJ 600
UNIT V A
A °C
Revision: 24-Jun-14
1 Document Number: 89983
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SE10DB, SE10DD, SE10DG, SE10DJ
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5 A IF = 10 A IF = 5 A IF = 10 A
TA = 25 °C TA = 125 °C
Reverse current
Rated VR
TA = 25 °C TA = 125 °C
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical junction capacitance 4.0 V, 1 MHz
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
VF (1)
IR (2) trr CJ
0.95 1.04 0.85 0.96
22 3000 67
MAX. -
1.15 -
1.10 15 150 -
UNIT
V
μA ns pF
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
SE10DB
SE10DD
SE10DG
Typical thermal resistance
RJA (1) RJM (2)
60 1.6
Notes
(1) Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient (2) With heatsink
SE10DJ
UNIT °C/W
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
AEC-Q101-001
Human body model (contact mode) C = 100 pF, R = 1.5 k
VC
H3B
VALUE > 8 kV
ORDERING INFORMATION (Example)
STANDARD
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AC (SMPD) SE10DJ-M3/I
0.54
TO-263AC (SMPD) SE10DJHM3/I (1)
0.54
Note (1) AEC-Q101 qualified
PREFERRED PACKAGE CODE
I
I
BASE QUANTITY
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel 13" diameter plastic tape and reel
Revision: 24-Jun-14
2 Document Number: 89983
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SE10DB, SE10DD, SE10DG, SE10DJ
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Average Forward Rectified Current (A)
11 10
9 8 7 6 5 4 3 2 1 0
0
RthJA=RthJC=1.6oC/W
Free air, TA, RthJA=60oC/W 25 50 75 100 125 150
175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Instantaneous Reverse Current (μA)
1000 100 10 1
TA = 175 °C TA = 150 °C TA = 125 °C
TA = 75 °C
0.1 0.01
TA = 25 °C
0.001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Average Power Loss (W)
13.0
12.0 11.0
D = 0.8 D = 0.5
10.0 D = 0.3
9.0 D = 0.2
8.0 D = 0.1 7.0
D = 1.0
6.0
5.0 4.0 T
3.0
2.0
1.0
D = tp/T
tp
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
TA = 175 °C 10
TA = 150 °C
1 TA = 125 °C 0.1
TA = 75 °C TA = 25 °C
0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical.