AON7220
25V N-Channel MOSFET
General Description
The AON7220 uses trench MOSFET technology that is uniquely optimized t...
AON7220
25V N-Channel MOSFET
General Description
The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "
Schottky style" soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
25V 50A < 3mΩ < 4mΩ
DFN 3.3x3.3
Top View
Bottom View
Top View
18 27 36
4 5G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 25 ±12 50 39 311 37 30 48 115 83 33 6.2 4
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 16 45 1.1
Max 20 55 1.5
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev 0: March 2011
www.aosmd.com
Page 1 of 6
AON7220
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
...