150V N-CHANNEL MOSFET
AON7254
150V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(...
Description
AON7254
150V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS MV) technology Very Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
150V 17A < 54mΩ < 66mΩ
Application
Synchronus Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN 3.3x3.3
Top View
Bottom View
Pin 1
Pin 1
Top View
18 27 36 45
G
D S
Orderable Part Number
AON7254
Package Type
DFN 3.3x3.3
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
ID
IDM IDSM
IAS EAS
VDS Spike Power Dissipation B
10µs TC=25°C TC=100°C
VSPIKE PD
Power Dissipation A
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 150 ±20 17 11 30 5.5 4.5 15 34 180 39 15.5 4.1 2.6
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State
RθJA
Steady-State
RθJC
Typ 25 50 2.6
Max 30 60 3.2
Units °C/W °C/W °C/W
Rev.1.0: October 2013
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