AON7280

AON7280 80V N-Channel MOSFET General Description Product Summary The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 50A < 8.5mΩ < 12mΩ DFN 3.3x3.3 EP Top View Bottom View Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 G Maximum 80 ±20 50 39 160 20 15 35 61 83 33 6.3 4 -55 to 150 Typ Max 16 20 45 55 1 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: Dec. 2012 www.aosmd.com Page 1 of 6 AON7280 Electrical Characteristic...