Document
AUTOMOTIVE GRADE
PD - 97703A
Features
l Advanced Planar Technology
l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant l Automotive Qualified*
G
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
AUIRLR3105
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ. max
S ID
55V
30mΩ 37mΩ 25A
G
Gate
D
S G
D-Pak AUIRLR3105
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation Linear Derating Factor
VGS EAS EAS (tested ) IAR
EAR dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value dAvalanche Current dRepetitive Avalanche Energy ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max. 25 18 100 57 0.38 ± 16 61 94
See Fig. 12a, 12b, 15, 16
3.4 -55 to + 175
300
Units
A
W W/°C
V mJ
A mJ V/ns
°C
Typ. ––– ––– –––
Max. 2.65 50 110
Units °C/W
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRLR3105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
VGS(th)
gfs IDSS
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current
55 ––– ––– ––– 0.056 ––– ––– 30 37 ––– 35 43 1.0 ––– 3.0 15 ––– ––– ––– ––– 20
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
ffmΩ
VGS = 10V, ID = 15A VGS = 5.0V, ID = 13A
fV VDS = VGS, ID = 250μA
S VDS = 25V, ID = 15A
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 20
ID = 15A
Qgs Gate-to-Source Charge
––– ––– 5.6 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 9.0
VGS = 5.0V, See Fig. 6 & 13
td(on) Turn-On Delay Time
––– 8.0 –––
VDD = 28V
tr Rise Time
––– 57 –––
ID = 15A
td(off) tf
Turn-Off Delay Time Fall Time
f––– 25 ––– ns RG = 24 Ω
––– 37 –––
RD = 5.0Ω, See Fig. 18
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Coss eff.
gOutput Capacitance
Effective Output Capacitance
Diode Characteristics
––– 710 ––– ––– 150 ––– ––– 28 ––– ––– 890 ––– ––– 110 ––– ––– 210 –––
and center of die contact VGS = 0V pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 25
MOSFET symbol
D
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 100
A showing the integral reverse
G
––– ––– 1.3 ––– 52 78 ––– 82 120
fp-n junction diode.
S
V TJ = 25°C, IS = 15A, VGS = 0V
fns TJ = 25°C, IF = 15A, VDD = 28V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by
max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.55mH, RG = 25Ω, IAS = 15.