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AUIRLR3105 Dataheets PDF



Part Number AUIRLR3105
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRLR3105 DatasheetAUIRLR3105 Datasheet (PDF)

AUTOMOTIVE GRADE PD - 97703A Features l Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* G Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per sili.

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AUTOMOTIVE GRADE PD - 97703A Features l Advanced Planar Technology l Logic-Level Gate Drive l Dynamic dV/dT Rating l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* G Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRLR3105 HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max S ID 55V 30mΩ 37mΩ 25A G Gate D S G D-Pak AUIRLR3105 D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V cIDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS EAS (tested ) IAR EAR dv/dt Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value dAvalanche Current dRepetitive Avalanche Energy ePeak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance Parameter kRθJC Junction-to-Case jRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Max. 25 18 100 57 0.38 ± 16 61 94 See Fig. 12a, 12b, 15, 16 3.4 -55 to + 175 300 Units A W W/°C V mJ A mJ V/ns °C Typ. ––– ––– ––– Max. 2.65 50 110 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/1/11 AUIRLR3105 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current 55 ––– ––– ––– 0.056 ––– ––– 30 37 ––– 35 43 1.0 ––– 3.0 15 ––– ––– ––– ––– 20 V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA ffmΩ VGS = 10V, ID = 15A VGS = 5.0V, ID = 13A fV VDS = VGS, ID = 250μA S VDS = 25V, ID = 15A μA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge ––– ––– 20 ID = 15A Qgs Gate-to-Source Charge ––– ––– 5.6 nC VDS = 44V fQgd Gate-to-Drain ("Miller") Charge ––– ––– 9.0 VGS = 5.0V, See Fig. 6 & 13 td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 28V tr Rise Time ––– 57 ––– ID = 15A td(off) tf Turn-Off Delay Time Fall Time f––– 25 ––– ns RG = 24 Ω ––– 37 ––– RD = 5.0Ω, See Fig. 18 LD Internal Drain Inductance ––– 4.5 ––– Between lead, D LS Internal Source Inductance nH 6mm (0.25in.) ––– 7.5 ––– from package G Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Coss eff. gOutput Capacitance Effective Output Capacitance Diode Characteristics ––– 710 ––– ––– 150 ––– ––– 28 ––– ––– 890 ––– ––– 110 ––– ––– 210 ––– and center of die contact VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig. 5 S VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 25 MOSFET symbol D (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– ––– 100 A showing the integral reverse G ––– ––– 1.3 ––– 52 78 ––– 82 120 fp-n junction diode. S V TJ = 25°C, IS = 15A, VGS = 0V fns TJ = 25°C, IF = 15A, VDD = 28V nC di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.55mH, RG = 25Ω, IAS = 15.


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