AUIRLR3114Z

AUTOMOTIVE GRADE PD - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature D VDSS RDS(on) max @ 10V 40V 4.9mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level G max @ 4.5V ID (Silicon Limited) 6.5mΩ k130A l Lead-Free, RoHS Compliant l Automotive Qualified * S ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D-Pak AUIRLR3114Z S D G I-Pak AUIRLU3114Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient te...