2SK1833

Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 500 ±30 ±2.5 ±5 15.6 Allowable power dissipation TC = 25°C Ta = 25°C PD 40 2 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse Unit V V A A mJ W °C °C s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage VDSS Gate threshold voltage Vth Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Diode forward voltage VDSF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1.5A VDS = 25V, ID = 1.5A IDR = 2.5A, VGS = 0 VDS = 20V, VGS ...