K1841

Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=10µA, VGS=0 VDS=15V, VGS=0 VGS=±10V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA, f=1kHz VGS=10V, ID=10mA VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz 3.0 3.8nom 1 : Drain 2 : Source 3 : Gate SANYO : SPA Ratings 30 ±12 100 300 200 125 –55 to +125 Unit V V mA mA mW ˚C ˚C Ratings min typ 30 0.01 0.3 0.9 25 50 15 12 4 0.4 max 1 ±10 1.5 25 Unit V µA nA V mS Ω pF pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of...