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Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie
Productnnu
18.0±0.5aendc Solder Dip
lifecycle stage.
Power F-MOS FETs
2SK1867
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown
q Allowing to supply by the radial taping
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
900 ±30 ±2 ±6 15
Allowable power dissipation
TC = 25°C PD Ta = 25°C
15 2
Channel temperature
Tch
Storage temperature
Tstg
* L = 7.5mH, IL = 2A, VDD = 50V, 1 pulse
150 −55 to +150
Unit V V A A mJ
W
°C °C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 900V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω
13.0±0.2e/ 4.2±0.2 2.5±0.2
10.0±0.2
unit: mm
5.0±0.1 1.0
90˚
0.35±0.1
1.2±0.1
0.65±0.1 1.05±0.1
0.55±0.1
C1.0 2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1: Gate 2: Drain 3: Source MT4 Type Package
min typ max Unit
0.1 mA
±1 µA
900 V
1 5V
3.8 4.85
Ω
1.5 2
S
−1.6 V
730 pF
90 pF
40 pF
40 ns
35 ns
105 ns
8.33 °C/W
1
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Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Forward transfer admittance |Yfs| (S)
DrainotoisourcennvoltagettieVDSn(V)nuaendce
Drain/current ID (A)
Power F-MOS FETs
ID VGS
8 VDS=25V
7
6
25˚C 100˚C
5
TC=0˚C
150˚C
4
3
2
1
0 0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VDS VGS
80 TC=25˚C
70
60
50
40 ID=6A
30
20
0.75A
3A
10 1.5A
0 0 5 10 15 20 25 30
Gate to source voltage VGS (V)
PD Ta
16 (1)TC=Ta
14 (2)Without heat sink (PD=2.0W)
12
10 (1)
8
6
4
2 (2)
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
| Yfs | ID
3.0 VDS=25V
2.4 TC=25˚C
1.8 100˚C 150˚C
1.2
0.6
0 012345
Drain current ID (A)
Ciss, Coss, Crss VDS
10000 3000
f=1MHz TC=25˚C
1000 300
Ciss
100
Coss 30
Crss 10
0 40 80 120 160 200
Drain to source voltage VDS (V)
Area of safe operation (ASO)
100 Non repetitive pulse TC=25˚C
30
10 IDP 3 ID 1
t=100µs
0.3 1ms 0.1 10ms
100ms 0.03
DC
0.01 1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
Avalanche energy capacity EAS (mJ)
Switching time ton,tf,td(off) (ns)
Drain to source ON-resistance RDS(on) (Ω)
2SK1867
RDS(on) ID
16 VGS=10V
14
12 TC=150˚C
10 100˚C
8 25˚C
6 0˚C
4
2
0 0123456
Drain current ID (A)
ton, tf, td(off) ID
150 VDD=200V VGS=10V TC=25˚C
120
90 td(off)
60 ton
30 tf
0 012345
Drain current ID (A)
EAS Tj
30 ID=2A
25
20
15
10
5
0 25 50 75 100 125 150
Junction temperature Tj (˚C)
Allowable power dissipation PD (W)DisMca
2
Power F-MOS FETs
Vth TC
6 VDS=25V ID=1mA
5
4
3
2
1
0 0 25 50 75 100 125 150
Case temperature TC (˚C)
Gate threshold voltage Vth (V)
VDS, VGS Qg
700 ID=3A
600
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VDD
L D.U.T
PG RG
VDD
RL D.U.T
PG RG
Avalanche energy capacity test circuit
Switching measurement circuit
00 0 10 20 30 40 50
Gate charge amount Qg (nC)
100 2
6 4
300 VGS
200
Drain to source voltage VDS (V) Gate to source voltage VGS (V)
10 8
500
VDS 400
14 12
2SK1867
3
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/
Request for your special attention and precautions in using the techn.