K1867 Datasheet | Silicon N-Channel Power F-MOS FET





K1867 PDF File (Datasheet) Download

Part Number K1867
Description Silicon N-Channel Power F-MOS FET
Manufacture Panasonic
Total Page 4 Pages
PDF Download Download K1867 PDF File

Features: Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocm wiie/cnpolDgdiina.ssUncpceRoaodLnnnttia pidalinmsnbasuaouiocneneniuoetdtdcnd.ie ltticnnaytnmocalp.eujaniuesepctn/ddtiee etentsnfyn/yfopaproelnelmdcoaetwitioynn pg.efourDisMcaionnttie Productnnu 18. 0±0.5aendc Solder Dip lifecycle stage. Power F-MOS FETs 2SK1867 Silicon N- Channel Power F-MOS FET s Features q A valanche energy capacity guaranteed: EA S > 15mJ q VGSS = ±30V guaranteed q Hi gh-speed switching: tf = 26ns q No seco ndary breakdown q Allowing to supply by the radial taping s Applications q Co ntactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power s upply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Dra in to Source breakdown voltage Gate to Source voltage Drain current DC Puls e Avalanche energy capacity VDSS VGSS ID IDP EAS* 900 ±30 ±2 ±6 15 Allo wable power dissipation TC = 25°C PD Ta = 25°C 15 2 Channel temperature Tch Storage temperature Tstg .

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Power F-MOS FETs
2SK1867
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 26ns
q No secondary breakdown
q Allowing to supply by the radial taping
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
900
±30
±2
±6
15
Allowable power
dissipation
TC = 25°C PD
Ta = 25°C
15
2
Channel temperature
Tch
Storage temperature
Tstg
* L = 7.5mH, IL = 2A, VDD = 50V, 1 pulse
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 900V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100
10.0±0.2
unit: mm
5.0±0.1
1.0
90˚
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1: Gate
2: Drain
3: Source
MT4 Type Package
min typ max Unit
0.1 mA
±1 µA
900 V
1 5V
3.8 4.85
1.5 2
S
1.6 V
730 pF
90 pF
40 pF
40 ns
35 ns
105 ns
8.33 °C/W
1

           






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