K1875 Datasheet PDF Download, Toshiba





(PDF) K1875 Datasheet Download

Part Number K1875
Description 2SK1875
Manufacture Toshiba
Total Page 5 Pages
PDF Download Download K1875 Datasheet PDF

Features: TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Fr equency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications 2SK18 75 Unit: mm · High |Yfs|: |Yfs| = 25 mS (typ.) · Low Ciss: Ciss = 7.5 pF (t yp.) Maximum Ratings (Ta = 25°C) Cha racteristics Gate-drain voltage Gate cu rrent Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -20 1 0 100 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25° C) JEDEC ― JEITA ― TOSHIBA 2- 2E1B Weight: 0.006 g (typ.) Character istics Symbol Test Condition Gate le akage current Gate-drain breakdown volt age Drain current Gate-source cut-off v oltage Forward transfer admittance Inpu t capacitance Reverse transfer capacita nce IGSS VGS = -15 V, VDS = 0 V V (B R) GDS VDS = 0 V, IG = -100 mA IDSS (N ote) VDS = 5 V, VGS = 0 V VGS (OFF) Yfsï Ciss Crss VDS = 5 V, ID = 1 mA VDS = 5 V, VGS = 0 V, f = 1 kHz VDS .

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
2SK1875
Unit: mm
· High |Yfs|: |Yfs| = 25 mS (typ.)
· Low Ciss: Ciss = 7.5 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
-20
10
100
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
IGSS
VGS = -15 V, VDS = 0 V
V (BR) GDS VDS = 0 V, IG = -100 mA
IDSS
(Note)
VDS = 5 V, VGS = 0 V
VGS (OFF)
ïYfsï
Ciss
Crss
VDS = 5 V, ID = 1 mA
VDS = 5 V, VGS = 0 V, f = 1 kHz
VDS = 5 V, VGS = 0 V, f = 1 MHz
VDG = 5 V, ID = 0 A, f = 1 MHz
Note: IDSS classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G) (L) (V)
( ).......IDSS rank marking
Min Typ. Max Unit
¾ ¾ -1.0 nA
-20 ¾
¾
V
6 ¾ 32 mA
¾
¾ -2.5
V
15 25 ¾ mS
¾ 7.5 10 pF
¾2
3 pF
1 2003-03-27

              






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