K1889 Datasheet | 2SK1889





K1889 PDF File (Datasheet) Download

Part Number K1889
Description 2SK1889
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1889 PDF File

Features: Ordering number:EN4648 N-Channel Silico n MOSFET 2SK1899 Ultrahigh-Speed Switch ing Applications Features · Low ON re sistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possi ble. · Reduction in the assembling tim e for 2SK1899- applied equipment. · Hi gh-density surface mount applications. · Small size of 2SK1899-applied equipm ent. Package Dimensions unit:mm 2090A [2SK1899] 10.2 4.5 1.3 1.5max 8.8 3.0 9.9 0.8 1.4 1 23 0.8 1.2 2.55 2.55 1.35 0 to 0.3 0.4 Specifications 2.5 5 2.55 2.7 1 : Gate 2 : Drain 3 : Sou rce SANYO : SMP-FD Absolute Maximum Ra tings at Ta = 25˚C Parameter Drain-to -Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse ) Allowable Power Dissipation Channel T emperature Storage Temperature Avalanch e Current Symbol VDSS VGSS ID IDP PD T ch Tstg IAV Conditions PW≤10µs, dut y cycle≤1% Tc=25°C VDS=30V, VGS=10V, L=0.1mH, Tc=25°C, Single pulse Ratings 60 ±20 18 72 1.65 60 150 –55 to +150.

Keywords: K1889, datasheet, pdf, Sanyo, 2SK1889, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Ordering number:EN4648
N-Channel Silicon MOSFET
2SK1899
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Surface mount type device making the following
possible.
· Reduction in the assembling time for 2SK1899-
applied equipment.
· High-density surface mount applications.
· Small size of 2SK1899-applied equipment.
Package Dimensions
unit:mm
2090A
[2SK1899]
10.2 4.5 1.3
1 23
0.8 1.2
2.55 2.55
0 to 0.3
0.4
Specifications
2.55 2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Current
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
VDS=30V, VGS=10V,
L=0.1mH, Tc=25°C, Single pulse
Ratings
60
±20
18
72
1.65
60
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
18 A
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=9A
Ratings
min typ max
Unit
60 V
±20 V
100 µA
±10 µA
1.0 2.0 V
8 13
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62199TH (KT)/11195TS BX-0019 No.4648–1/4

           






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)