K1888

Ordering number:EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1888] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Conditions PW≤10µs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tc=25°C Tch Tstg Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=18A ID=18A, VGS=10V ID=18A, VGS=4V 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 30 ±15 30 120 2.0 30 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 30 V ±15 V 100 µA ±10 µA 1.0 2.0 V 17.5 29 S 15 25 mΩ 25 35 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications t...