K1888 Datasheet PDF | Sanyo





(PDF) K1888 Datasheet PDF

Part Number K1888
Description 2SK1888
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1888 Datasheet PDF

Features: Ordering number:EN4204 N-Channel Silico n MOSFET 2SK1888 Ultrahigh-Speed Switch ing Applications Features · Low ON re sistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless pack age facilitating mounting. Package Dim ensions unit:mm 2063A [2SK1888] 4.5 10. 0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDS S VGSS ID IDP Conditions PW≤10µs, d uty cycle≤1% Allowable Power Dissipa tion Channel Temperature Storage Temper ature PD Tc=25°C Tch Tstg Electrical Characteristics at Ta = 25˚C Paramet er Drain-to-Source Breakdown Voltage Ga te-to-Source Breakdown Voltage Zero-Gat e Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sou rce ON-State Resistance Symbol Condit ions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA,.

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K1888 datasheet
Ordering number:EN4204
N-Channel Silicon MOSFET
2SK1888
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2063A
[2SK1888]
4.5
10.0 2.8
3.2
1.6
1.2
0.75
123
2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Conditions
PW10µs, duty cycle1%
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD Tc=25°C
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=30V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=10V
ID=18A, VGS=4V
2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Ratings
30
±15
30
120
2.0
30
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
30 V
±15 V
100 µA
±10 µA
1.0 2.0 V
17.5
29
S
15 25 m
25 35 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62199TH (KT)/41293TH (KOTO) AX-8377 No.4204–1/4

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