2N2222

2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 60 30 5.0 800 500 1.2 -65 to +200 350 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V - ICBO VCB=50V, TA=150°C - IEBO VEB=3.0V - BVCBO IC=10μA 60 BVCEO IC=10mA 30 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA - VCE(SAT) IC=500mA, IB=50mA - VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA - fT VCE=20V, IC=20mA, f=100MHz 250 Cob VCB=10V, IE=0, f=100kHz - Cib VEB=0.5V, IC=0, f=100kHz - MAX 10 10 10 0.4 1.6 1.3 2.6 8.0 30 UNITS V V V mA mW W °C °C/W °C/W UNITS nA μA nA V V V V V V V MHz pF pF R2 (24-July 2013) 2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N2221 2N2222 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 20 - 35 - hFE VCE=10V, IC=1.0mA 25 - 50 - hFE VCE=10V, IC=10mA 35 - 75 - hFE VCE=10V, IC=...