D1729

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1729 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current (DC) ICM Collector current (Pulse) IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 700 7 3.5 10 1.5 60 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A ICBO Collector cut-off current VCB=750V; IE=0 VCB=1500V; IE=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=10V VF Diode forward voltage IF=-3.5A,IB=0 Switching times ts Storage time tf Fall time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V Product Specification 2SD1729 MIN TYP. MAX UNIT 7V 8.0 V 1.5 V 10 µA 1 m...