D1739

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1739 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO IC ICM IB PC Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1739 CHARACTERISTICS www.datTasj=h2ee5t4u.ucnomless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 ICBO Collector cut-off current VCB=750V; IE=0 VCB=1500V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=10V Switching times tstg Storage time tf Fall time IC=5A; IB1=1A IB2=-2A; VCC=200V MIN TYP. MAX UNIT 8.0 V 1.5 V 7V 10 µA 1 mA 10 µA 6 30 2 MHz 1.5 µs 0.2 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u....