Document
SPEED
!icon Controlled Rectifier
800 Volts
300A RMS
The General Electric C184 and Cl85 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PicPac devices, employing the field-proven amplifying gate.
FEATURES:
.. High di/dt Ratings. .. High dv/dt Capability. .. Excellent Surge and 12 t Ratings Providing Easy Fusing. .. Guaranteed Maximum Tum-Off Time with Selections Available. .. Rugged Hermetic Package with Long Creepage Path.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, VDRMI
TJ = -40°C to +125°C
C184/C185A C184/C185B C184/C185C C184/C185D C184/C185E C184/C185M
C185S C185N
100 Volts 200 300 400 500 600 700 800
1 Half sinewave waveform, 10 ms max. pulse width.
REPETITIVE PEAK REVERSE VOLTAGE, VRRM 1
TJ = -40°C to +125°C
100 Volts 200 300 400 500 600 700 800
NON-REPETITIVE PEAK REVERSE VOLTAGE, VRSM 1
TJ = +125°C
200 Volts 300 400 500 600 720 840 960
RMS On-State Current, IT(RMS) . . • • . . . . . . • • . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . 300 Amperes Critical Rate-of-Rise of On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 800 A/ps Critical Rate-of-Rise of On-State Current, Repetitivet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " 500 A/ps Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3500 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, ITsM (50 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3200 Amperes 12 t (for fusing) for times:;;:' 1.5 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,000 (RMS Ampere? Seconds 12 t (for fusing) for times:;;:' 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50,000 (RMS Ampere)2 Seconds Average Gate Power Dissipation, PG(AV) . . . . . . . . . • . • . . . . . . . . . . • . . . . . . . . . • . • . • • . . . . . . . . . . . . . 2 Watts Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40°C to +lSO°C Operating Temperature, TJ • . • • . • • . . . . . . • • . • • • • • . • . • . . . • • • • . . . • • • • . • • • • • • • • • • • . • • -40°C to +l 2SoC Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 w-In (Max.), 250 Lb-IN (MinJ
34 N-m (Max.), 28 N-m (Min.)
tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts, wo ohms gate trigger source with 0.5/ls short circuit trigger current rise time.
851
C184,C185
CHARACTERISTICS
TEST
Repetitive Peak Reverse and Off-State Current
Repetitive Peak Reverse and Off-State Current
Thermal Resistance Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching)
Holding Current
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak On-State Voltage
Turn-On Delay Time
Conventional Circuit Commutated Turn-Off Time (with Reverse Voltage)
Conventional Circuit Commutated Turn-Off Time (with Feedback Diode)
SYMBOL
IRRM . and IORM
IRRM and IORM
MIN.
-
-
TYP.
3
MAX.
10
UNITS
rnA
TEST CONDITIONS
TJ = +2SoC, V = VORM = VRRM
IS 20 rnA TJ = l2SoC, V = VORM = VRRM
ROJC
-
.12 .1S DC/Watt Jun ction-to-Case
dv/dt 200 SOO
-
V/Ilsec TJ = +12SoC, Gate Open. VORM = Rated,
linear or exponential rising waveform.
Exponential dv/dt = VORM (.632) T
Higher minimum dv/dt selections available - consult factory.
IH -
7S SOO mAdc Tc = +2SoC, Anode Supply = 24 Vdc. Initial On-State Current = 2.S Amps.
IGT -
-
-
l2S 300 mAdc Tc = +2SoC, Vo = 6Vdc, RL = 3 Ohms
l7S SOO
Tc = -40°C, Vo = 6 Vdc, RL = 3 Ohms
100 2S0
Tc = +12SoC, Vo = 6 Vdc, RL = 3 Ohms
VGT - - S.O Vdc Tc =-40°C to O°C, Vo =6Vdc, RL = 3 Ohms
- - 3.0
Tc = O°C to +12SoC, Vo =6Vdc, RL =3 Ohms
O.lS -
Tc =+12SoC, VORM, RL =1000 Ohms
VTM -
2.3 2.8S Volts Tc = +2SoC, ITM = lSOO Amps Peak.
Duty Cycle ~ .01%.
td -
1-
Ilse c
Tc = +2SoC, IT = SO Adc, VORM ' Gate Supply: 20 Volt Open Circuit, 20 Ohm, 0.1 Ilsec max. Rise Time.
tq
C184 C18S
-
-
tq (diode)
C184 C18S
-
Ilsec (1) Tc = +12SoC
(2) ITM = 2S0 Amps.
8 10 IS 20
(3) VR = SO Volts Min. (4) VORM (Reapplied)
(S) Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/Ilsec (linear)
(6) Commutation di/dt = l2.S Amps/Ilsec.
(7) Duty Cycle ~ .01 %.
(8) Gate Bias During Turn-Off Interval =
o Volts, 100 Ohms.
Ilsec (1) Tc = +12SoC
(2) ITM = 2S0 Amps.
10 t 20 t
(3) VR = 1 Volt (4) VORM (Reapplied) (S) Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/Ilsec (linear) (6) Commutation di/dt = 12.S Amps/Ilsec.
(7) Duty Cycle ~ .01%.
(8) Gate Bias During Turn-Off Interval =
o Volts, 100 Ohms.
I tConsult factory for maximum turn-off time.
852
SINE
CURRENT
DATA
100 40 iO iO 00 200 400 600 1000 2000 4000 PULSE BASE WID.