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C184C Dataheets PDF



Part Number C184C
Manufacturers ETC
Logo ETC
Description Silicon Controlled Rectifier
Datasheet C184C DatasheetC184C Datasheet (PDF)

SPEED !icon Controlled Rectifier 800 Volts 300A RMS The General Electric C184 and Cl85 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PicPac devices, employing the field-proven amplifying gate. FEATURES: .. High di/dt Ratings. .. High dv/dt Capability. .. Excellent Surge and 12 t Ratings Providing Easy Fusing. .. Guaranteed Maximum Tum-Off Time with Selections Available. .. Rugged Hermetic Package with Long Creepage Path. MAXIMUM AL.

  C184C   C184C


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SPEED !icon Controlled Rectifier 800 Volts 300A RMS The General Electric C184 and Cl85 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PicPac devices, employing the field-proven amplifying gate. FEATURES: .. High di/dt Ratings. .. High dv/dt Capability. .. Excellent Surge and 12 t Ratings Providing Easy Fusing. .. Guaranteed Maximum Tum-Off Time with Selections Available. .. Rugged Hermetic Package with Long Creepage Path. MAXIMUM ALLOWABLE RATINGS TYPES REPETITIVE PEAK OFF-STATE VOLTAGE, VDRMI TJ = -40°C to +125°C C184/C185A C184/C185B C184/C185C C184/C185D C184/C185E C184/C185M C185S C185N 100 Volts 200 300 400 500 600 700 800 1 Half sinewave waveform, 10 ms max. pulse width. REPETITIVE PEAK REVERSE VOLTAGE, VRRM 1 TJ = -40°C to +125°C 100 Volts 200 300 400 500 600 700 800 NON-REPETITIVE PEAK REVERSE VOLTAGE, VRSM 1 TJ = +125°C 200 Volts 300 400 500 600 720 840 960 RMS On-State Current, IT(RMS) . . • • . . . . . . • • . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . 300 Amperes Critical Rate-of-Rise of On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 800 A/ps Critical Rate-of-Rise of On-State Current, Repetitivet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " 500 A/ps Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3500 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, ITsM (50 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3200 Amperes 12 t (for fusing) for times:;;:' 1.5 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,000 (RMS Ampere? Seconds 12 t (for fusing) for times:;;:' 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50,000 (RMS Ampere)2 Seconds Average Gate Power Dissipation, PG(AV) . . . . . . . . . • . • . . . . . . . . . . • . . . . . . . . . • . • . • • . . . . . . . . . . . . . 2 Watts Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40°C to +lSO°C Operating Temperature, TJ • . • • . • • . . . . . . • • . • • • • • . • . • . . . • • • • . . . • • • • . • • • • • • • • • • • . • • -40°C to +l 2SoC Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 w-In (Max.), 250 Lb-IN (MinJ 34 N-m (Max.), 28 N-m (Min.) tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts, wo ohms gate trigger source with 0.5/ls short circuit trigger current rise time. 851 C184,C185 CHARACTERISTICS TEST Repetitive Peak Reverse and Off-State Current Repetitive Peak Reverse and Off-State Current Thermal Resistance Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) Holding Current DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Turn-On Delay Time Conventional Circuit Commutated Turn-Off Time (with Reverse Voltage) Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) SYMBOL IRRM . and IORM IRRM and IORM MIN. - - TYP. 3 MAX. 10 UNITS rnA TEST CONDITIONS TJ = +2SoC, V = VORM = VRRM IS 20 rnA TJ = l2SoC, V = VORM = VRRM ROJC - .12 .1S DC/Watt Jun ction-to-Case dv/dt 200 SOO - V/Ilsec TJ = +12SoC, Gate Open. VORM = Rated, linear or exponential rising waveform. Exponential dv/dt = VORM (.632) T Higher minimum dv/dt selections available - consult factory. IH - 7S SOO mAdc Tc = +2SoC, Anode Supply = 24 Vdc. Initial On-State Current = 2.S Amps. IGT - - - l2S 300 mAdc Tc = +2SoC, Vo = 6Vdc, RL = 3 Ohms l7S SOO Tc = -40°C, Vo = 6 Vdc, RL = 3 Ohms 100 2S0 Tc = +12SoC, Vo = 6 Vdc, RL = 3 Ohms VGT - - S.O Vdc Tc =-40°C to O°C, Vo =6Vdc, RL = 3 Ohms - - 3.0 Tc = O°C to +12SoC, Vo =6Vdc, RL =3 Ohms O.lS - Tc =+12SoC, VORM, RL =1000 Ohms VTM - 2.3 2.8S Volts Tc = +2SoC, ITM = lSOO Amps Peak. Duty Cycle ~ .01%. td - 1- Ilse c Tc = +2SoC, IT = SO Adc, VORM ' Gate Supply: 20 Volt Open Circuit, 20 Ohm, 0.1 Ilsec max. Rise Time. tq C184 C18S - - tq (diode) C184 C18S - Ilsec (1) Tc = +12SoC (2) ITM = 2S0 Amps. 8 10 IS 20 (3) VR = SO Volts Min. (4) VORM (Reapplied) (S) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Ilsec (linear) (6) Commutation di/dt = l2.S Amps/Ilsec. (7) Duty Cycle ~ .01 %. (8) Gate Bias During Turn-Off Interval = o Volts, 100 Ohms. Ilsec (1) Tc = +12SoC (2) ITM = 2S0 Amps. 10 t 20 t (3) VR = 1 Volt (4) VORM (Reapplied) (S) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Ilsec (linear) (6) Commutation di/dt = 12.S Amps/Ilsec. (7) Duty Cycle ~ .01%. (8) Gate Bias During Turn-Off Interval = o Volts, 100 Ohms. I tConsult factory for maximum turn-off time. 852 SINE CURRENT DATA 100 40 iO iO 00 200 400 600 1000 2000 4000 PULSE BASE WID.


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