C3527

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER i.cnCollector-Base Voltage .iscsemCollector-Emitter Voltage wwwEmitter-Base voltage VALUE UNIT 500 V 400 V 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IBB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Downloaded from Elcodis.com electronic components distributor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3527 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB=B 1.4A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 V 1.5 V 100 μA 100 μA hFE-1 DC Current Gain IC= 2A; VCE= 5V 15 hFE-2 DC Current Gain i.cnfT Current-Gain—Bandwidth Product .iscsemSwitching times wwwton Turn-On Time IC= 7A; VCE= 5...