IPW60R099CS

CoolMOSTM Power Transistor Features Lowest figure-of-merit RON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant CoolMOS CS is specially designed for: Hard switching SMPS topologies Zero-voltage switching SMPS topologies CCM PFC Product Summary V DS R DS(on),max Q g,typ IPW60R099CS 600 V 0.099 Ω 60 nC PG-TO247-3 Type IPW60R099CS Package PG-TO247-3 Ordering Code Q67045A5060 Marking 6R099 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Symbol Conditions ID I D,pulse E AS E AR T C=25 °C T C=100 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) P tot T j, T stg T C=25 °C M3 and M3.5 screws Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 60 Rev. 1.1 page 1 Unit A mJ A V/ns V W °C Ncm 2005-03-10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current Symbol Conditions IS I S,pulse T C=25 °C IPW60R099CS Value 18 93 Unit A Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resi...